Infineon, Type N-Channel IGBT, 12 A 600 V, 3-Pin TO-263, Through Hole
- RS 제품 번호:
- 273-2968
- 제조사 부품 번호:
- IKB06N60TATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩5,546.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 48 | ₩2,773.00 | ₩5,546.00 |
| 50 - 98 | ₩2,350.00 | ₩4,700.00 |
| 100 - 248 | ₩1,814.20 | ₩3,628.40 |
| 250 - 498 | ₩1,692.00 | ₩3,384.00 |
| 500 + | ₩1,522.80 | ₩3,045.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-2968
- 제조사 부품 번호:
- IKB06N60TATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current Ic | 12A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 88W | |
| Package Type | TO-263 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-free lead plating, J-STD-020, RoHS, JEDEC, JESD-022 | |
| Series | TrenchStop | |
| Height | 4.57mm | |
| Length | 9.45mm | |
| Width | 10.31 mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current Ic 12A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 88W | ||
Package Type TO-263 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-free lead plating, J-STD-020, RoHS, JEDEC, JESD-022 | ||
Series TrenchStop | ||
Height 4.57mm | ||
Length 9.45mm | ||
Width 10.31 mm | ||
Automotive Standard No | ||
The Infineon IGBT3 compacted with full-rated free-wheeling diode in a TO263 D2Pak package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of
High ruggedness and temperature stable behaviour
Very tight parameter distribution
High device reliability
관련된 링크들
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