제조사부품번호

Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

RS 제품 번호:: 165-5613
제조사 부품 번호:: IGB10N60TATMA1
제조업체:: Infineon

Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

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대량 구매 할인 기용 가능

Subtotal (1 reel of 1000 units)*

₩710,640.00

일시적 품절

2026년 5월 20일 부터 배송

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수량	한팩당	릴당*
1000 - 4000	₩710.64	₩711,580.00
5000 +	₩697.48	₩697,292.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 165-5613
제조사 부품 번호:: IGB10N60TATMA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Maximum Continuous Collector Current	10 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	110 W
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Channel Type	N
	Pin Count	3
	Switching Speed	1MHz
	Transistor Configuration	Single
	Dimensions	10.31 x 9.45 x 4.57mm
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-40 °C

	모두 선택
	브랜드 Infineon
	Maximum Continuous Collector Current 10 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 110 W
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Channel Type N
	Pin Count 3
	Switching Speed 1MHz
	Transistor Configuration Single
	Dimensions 10.31 x 9.45 x 4.57mm
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -40 °C

해당 안됨

COO (Country of Origin):: CN

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

Infineon TrenchStop IGBT Transistors, 600 and 650V

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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