Infineon IGB10N60TATMA1, Type N-Channel IGBT, 20 A 600 V, 3-Pin TO-263, Surface
- RS 제품 번호:
- 826-9055
- 제조사 부품 번호:
- IGB10N60TATMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 20 units)*
₩29,628.80
일시적 품절
- 2026년 3월 16일 부터 600 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 20 - 240 | ₩1,481.44 | ₩29,647.60 |
| 260 - 480 | ₩1,445.72 | ₩28,914.40 |
| 500 + | ₩1,423.16 | ₩28,463.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 826-9055
- 제조사 부품 번호:
- IGB10N60TATMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 20A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 110W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 20A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 110W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Series TrenchStop | ||
Automotive Standard No | ||
해당 안됨
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
관련된 링크들
- Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount
- Infineon IGB50N60TATMA1 IGBT, 90 A 600 V, 3-Pin PG-TO263-3
- Infineon IGB15N60TATMA1 IGBT, 26 A 600 V, 3-Pin PG-TO263-3
- Infineon IKB10N60TATMA1 Single Collector, Single Emitter, Single Gate IGBT, 30 A 600 V TO-263-3
- Infineon IGB15N65S5ATMA1 IGBT PG-TO263-3
- Infineon IKB20N60TATMA1 IGBT, 41 A 600 V, 3-Pin PG-TO263-3, Through Hole
- Infineon IGB30N60H3ATMA1 IGBT, 60 A 600 V, 3-Pin PG-TO263-3, Through Hole
- Infineon IKB06N60TATMA1 IGBT, 1899-12-31 06:00:00 600 V, 3-Pin TO-263, Through Hole