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Infineon IKP10N60TXKSA1 IGBT Transistor Module, 24 A 600 V PG-TO-220-3

RS 제품 번호:: 259-1529
제조사 부품 번호:: IKP10N60TXKSA1
제조업체:: Infineon

Infineon IKP10N60TXKSA1 IGBT Transistor Module, 24 A 600 V PG-TO-220-3

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RS는 이 제품을 더 이상 판매하지 않습니다.

RS 제품 번호:: 259-1529
제조사 부품 번호:: IKP10N60TXKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Maximum Continuous Collector Current	24 A
	Maximum Collector Emitter Voltage	600 V
	Maximum Gate Emitter Voltage	±20V
	Maximum Power Dissipation	110 W
	Number of Transistors	3
	Package Type	PG-TO-220-3

	모두 선택
	브랜드 Infineon
	Maximum Continuous Collector Current 24 A
	Maximum Collector Emitter Voltage 600 V
	Maximum Gate Emitter Voltage ±20V
	Maximum Power Dissipation 110 W
	Number of Transistors 3
	Package Type PG-TO-220-3

Datasheet - IKP10N60TXKSA1

The Infineon trenchstop low loss duo pack and it is field stop technology with soft, fast recovery anti-parallel emitter controlled HE diode. It is Hard-switching 600 V, 10 A trenchstop IGBT3 co-packed with full-rated free-wheeling diode in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and field stop concept.

Highest efficiency and low conduction and switching losses
Comprehensive portfolio in 600 V and 1200 V for flexibility of design
High device reliability
Low EMI emissions

Infineon IKP10N60TXKSA1 IGBT Transistor Module, 24 A 600 V PG-TO-220-3

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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