Infineon IKP20N60TXKSA1, Type N-Channel IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole
- RS 제품 번호:
- 170-2258
- 제조사 부품 번호:
- IKP20N60TXKSA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 tube of 50 units)*
₩162,526.00
일시적 품절
- 2026년 8월 20일 부터 500 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 50 - 50 | ₩3,250.52 | ₩162,526.00 |
| 100 - 150 | ₩3,152.76 | ₩157,656.80 |
| 200 + | ₩3,058.76 | ₩152,919.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 170-2258
- 제조사 부품 번호:
- IKP20N60TXKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current Ic | 41A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 166W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.05V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, JEDEC, RoHS | |
| Series | TrenchStop | |
| Energy Rating | 0.77mJ | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current Ic 41A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 166W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.05V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, JEDEC, RoHS | ||
Series TrenchStop | ||
Energy Rating 0.77mJ | ||
Automotive Standard No | ||
Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses
Lowest V ce(sat) drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
Very soft, fast recovery anti-parallel Emitter Controlled Diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution
Benefits:
Highest efficiency – low conduction and switching losses
Comprehensive portfolio in 600V and 1200V for flexibility of design
High device reliability
Target Applications:
UPS
Solar Inverters
Major Home Appliances
Welding
Air conditioning
Industrial Drives
Other hard switching applications
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