Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole
- RS 제품 번호:
- 170-2371
- 제조사 부품 번호:
- IKP20N60TXKSA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 pack of 10 units)*
₩19,664.80
재고있음
- 2,480 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 10 - 10 | ₩1,966.48 | ₩19,664.80 |
| 20 - 20 | ₩1,917.60 | ₩19,176.00 |
| 30 + | ₩1,887.52 | ₩18,875.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 170-2371
- 제조사 부품 번호:
- IKP20N60TXKSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current | 41 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 166 W | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.36 x 4.57 x 15.95mm | |
| Minimum Operating Temperature | -40 °C | |
| Energy Rating | 0.77mJ | |
| Maximum Operating Temperature | +175 °C | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current 41 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 166 W | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.36 x 4.57 x 15.95mm | ||
Minimum Operating Temperature -40 °C | ||
Energy Rating 0.77mJ | ||
Maximum Operating Temperature +175 °C | ||
Infineon IGBT
The Infineon IGBT is a 3-pin N-channel TO-220 through-hole mount transistor. It has a current rating of 41A and a voltage rating of 600V 3rd generation reverse conducting IGBT optimized for lower switching and conduction losses. Its soft switching behaviour allows for better performance and EMI behaviour. With the help of this transistor excellent performance can be achieved at lower costs.
Features and Benefits
• Cost efficient
• High efficiency
• Low EMI emissions
• Low switching losses
• Lowest V ce (sat) drop for lower conduction losses
• Maximum power dissipation is 166W
• Operating temperature ranges between -40°C and 175°C
• Reduced power dissipation
• Surge current capability
• Very soft, fast recovery anti-parallel emitter controlled diode
• High efficiency
• Low EMI emissions
• Low switching losses
• Lowest V ce (sat) drop for lower conduction losses
• Maximum power dissipation is 166W
• Operating temperature ranges between -40°C and 175°C
• Reduced power dissipation
• Surge current capability
• Very soft, fast recovery anti-parallel emitter controlled diode
Applications
• Home appliances
• Induction cooking stoves
• Industrial drives
• Microwave ovens
• Rice cookers
• UPS
• Welding
• Induction cooking stoves
• Industrial drives
• Microwave ovens
• Rice cookers
• UPS
• Welding
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• BS EN 61340-5-1:2007
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
관련된 링크들
- Infineon IKP20N60TXKSA1 IGBT, 41 A 600 V, 3-Pin TO-220, Through Hole
- Infineon IKP10N60TXKSA1 IGBT Transistor Module, 24 A 600 V PG-TO-220-3
- Infineon IKP15N60TXKSA1 IGBT, 26 A 600 V, 3-Pin TO-220, Through Hole
- Infineon IKP06N60TXKSA1 IGBT, 6 A 600 V, 3-Pin TO-220, Through Hole
- Infineon IKP04N60TXKSA1 IGBT, 8 A 600 V, 3-Pin PG-TO-220-3, Through Hole
- Infineon IGP15N60TXKSA1 Single IGBT, 26 A 600 V TO-220-3
- Infineon IGP50N60TXKSA1 IGBT Transistor Module, 90 A 600 V PG-TO220-3
- Infineon IGP10N60TXKSA1 IGBT PG-TO-220-3
