제조사부품번호

Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1.2 kV

RS 제품 번호:: 244-5822
제조사 부품 번호:: FF300R12KT4HOSA1
제조업체:: Infineon

Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1.2 kV

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Subtotal (1 tray of 10 units)*

₩2,485,700.00

일시적 품절

2027년 5월 25일 부터 배송

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수량	한팩당	Per Tray*
10 - 10	₩248,570.00	₩2,485,700.00
20 - 20	₩243,600.00	₩2,436,000.00
30 +	₩238,728.00	₩2,387,280.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 244-5822
제조사 부품 번호:: FF300R12KT4HOSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	IGBT Module
	Maximum Continuous Collector Current Ic	450A
	Maximum Collector Emitter Voltage Vceo	1.2kV
	Number of Transistors	2
	Maximum Power Dissipation Pd	1600W
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2.15V
	Maximum Operating Temperature	175°C
	Width	61.4mm
	Series	FF
	Standards/Approvals	No
	Length	106.4mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type IGBT Module
	Maximum Continuous Collector Current Ic 450A
	Maximum Collector Emitter Voltage Vceo 1.2kV
	Number of Transistors 2
	Maximum Power Dissipation Pd 1600W
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2.15V
	Maximum Operating Temperature 175°C
	Width 61.4mm
	Series FF
	Standards/Approvals No
	Length 106.4mm
	Automotive Standard No

Datasheet - FF300R12KT4HOSA1

Infineon Series FF IGBT Module, 1200V Collector-Emitter Voltage, 450A Collector Current - FF300R12KT4HOSA1

This IGBT module is a power semiconductor device designed to switch and control high-voltage DC circuits in industrial power systems. It combines two transistors in a single package to handle high current loads and operates across a wide temperature range suitable for demanding thermal environments.

Features and Benefits:

• 1200V blocking capability for high-voltage switching applications
• 450A continuous collector current to support heavy current demands
• 1600W maximum power dissipation for sustained high-power operation
• 2.15V low Vce(sat) for reduced conduction losses
• 20V maximum gate-emitter rating to define safe drive limits
• Operates up to 175°C for elevated-temperature installations

Applications

• Suitable for high-voltage motor drive systems
• Ideal for industrial inverters requiring high current
• Can be used for renewable-energy converter stages
• Used with power supplies needing Compact dual transistors
• Applicable in traction or utility power-electronics environments

What transistor configuration does it provide?

It contains two matched transistors in a single module allowing synchronous or complementary switching arrangements.

What environmental extremes can it withstand?

It is rated to function down to -40°C and up to 175°C for operation across wide temperature ranges.

How does the gate-emitter limitation affect drive circuitry?

The 20V gate-emitter limit defines the maximum allowable gate-drive voltage and determines required gate-drive protection and level-shifting design.

What electrical stress limits should designers observe?

Designers must account for a 1200V collector-emitter blocking limit and a 1600W package dissipation ceiling when planning thermal management.