Infineon FF200R12KT4HOSA1 Series IGBT Module, 320 A 1200 V, 3-Pin 62MM Module, Panel Mount
- RS 제품 번호:
- 761-3754
- 제조사 부품 번호:
- FF200R12KT4HOSA1
- 제조업체:
- Infineon
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Subtotal (1 unit)*
₩130,208.80
일시적 품절
- 2027년 2월 11일 부터 10 개 단위 배송
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수량 | 한팩당 |
|---|---|
| 1 - 2 | ₩130,208.80 |
| 3 - 14 | ₩126,956.40 |
| 15 + | ₩124,418.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 761-3754
- 제조사 부품 번호:
- FF200R12KT4HOSA1
- 제조업체:
- Infineon
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current | 320 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 1.1 kW | |
| Package Type | 62MM Module | |
| Configuration | Series | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Series | |
| Dimensions | 106.4 x 61.4 x 30.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -40 °C | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current 320 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 1.1 kW | ||
Package Type 62MM Module | ||
Configuration Series | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Series | ||
Dimensions 106.4 x 61.4 x 30.9mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -40 °C | ||
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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