Infineon FP25R12W2T4B11BOMA1 IGBT Module 1200 V
- RS 제품 번호:
- 244-5389
- 제조사 부품 번호:
- FP25R12W2T4B11BOMA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (15 units, in trays of 15)*
₩935,550.00
일시적 품절
- 2027년 2월 16일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tray* |
|---|---|---|
| 15 - 15 | ₩62,370.00 | ₩935,540.00 |
| 30 - 30 | ₩61,122.00 | ₩916,820.00 |
| 45 + | ₩59,900.00 | ₩898,500.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 244-5389
- 제조사 부품 번호:
- FP25R12W2T4B11BOMA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 175W | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 51mm | |
| Height | 12mm | |
| Standards/Approvals | RoHS | |
| Width | 42.5mm | |
| Series | FP25R12W2T4B11B | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 175W | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 51mm | ||
Height 12mm | ||
Standards/Approvals RoHS | ||
Width 42.5mm | ||
Series FP25R12W2T4B11B | ||
Automotive Standard No | ||
Infineon FP25R12W2T4B11B Series IGBT Module, 175W Maximum Power Dissipation, 1200V Max Collector Emitter Voltage - FP25R12W2T4B11BOMA1
This IGBT module is a high-voltage power switching device designed for demanding industrial applications. It combines multiple transistors in a single package to manage high collector-emitter voltages and significant power dissipation while operating across a wide temperature range.
Features and Benefits:
• Handles 1200V collector-emitter voltage for high-voltage systems
• Manages 175W maximum power dissipation for sustained loads
• Operates to 150°C for high-temperature duty cycles
• Seven transistors in one module to simplify circuit design
• Low saturation voltage 2.25V to reduce conduction losses
• Gate-emitter rating 20V to accommodate common drive levels
• Manages 175W maximum power dissipation for sustained loads
• Operates to 150°C for high-temperature duty cycles
• Seven transistors in one module to simplify circuit design
• Low saturation voltage 2.25V to reduce conduction losses
• Gate-emitter rating 20V to accommodate common drive levels
Applications
• Suitable for industrial motor drives requiring high-voltage switching
• Ideal for power converters in renewable energy systems
• Used with inverter stages in large HVAC installations
• Can be used for traction auxiliary power systems
• Appropriate for high-temperature environments in heavy industry
• Ideal for power converters in renewable energy systems
• Used with inverter stages in large HVAC installations
• Can be used for traction auxiliary power systems
• Appropriate for high-temperature environments in heavy industry
What ambient range can it withstand?
It is specified to function down to −40°C and up to 150°C.
How does the gate-emitter limit affect driver selection?
Gate drivers must not exceed the 20V gate-emitter rating to avoid overstress.
What electrical characteristic reduces energy loss during conduction?
The modules collector-emitter saturation voltage of 2.25V limits conduction losses.
How many switching elements are integrated in the package?
The module contains seven discrete transistors within a single enclosure.
Is the product suitable for environmentally restricted manufacturing?
It meets RoHS requirements and is therefore compliant with lead-free process constraints.
관련된 링크들
- Infineon FP25R12W2T4B11BOMA1 IGBT Module 1200 V
- Infineon IGBT Module, 28 A 1200 V Module, Panel
- Infineon IGBT Module 1200 V
- Infineon FP15R12W1T4B11BOMA1 IGBT Module, 28 A 1200 V Module, Panel
- Infineon IGBT Module, 20 A 1200 V Module, Panel
- Infineon FP25R12W2T4BOMA1 IGBT Module 1200 V
- Infineon, N-Channel IGBT Module, 10 A 1200 V EASY1B, Clamp
- Infineon FP15R12W1T4BOMA1 IGBT Module 1200 V
