Infineon IHW20N120R5XKSA1 IGBT Single Transistor IC, 20 A 1200 V, 3-Pin PG-TO-247

RS 제품 번호:: 244-2913
제조사 부품 번호:: IHW20N120R5XKSA1
제조업체:: Infineon

Infineon IHW20N120R5XKSA1 IGBT Single Transistor IC, 20 A 1200 V, 3-Pin PG-TO-247

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Subtotal (1 tube of 240 units)*

₩774,720.00

일시적 품절

2027년 1월 14일 부터 240 개 단위 배송

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수량	한팩당	Per Tube*
240 - 240	₩3,228.00	₩774,768.00
480 +	₩3,100.00	₩743,760.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 244-2913
제조사 부품 번호:: IHW20N120R5XKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	IGBT Single Transistor IC
	Maximum Continuous Collector Current Ic	20A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	288W
	Package Type	PG-TO-247
	Pin Count	3
	Maximum Collector Emitter Saturation Voltage VceSAT	1.55V
	Maximum Gate Emitter Voltage VGEO	±20 %
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Series	Resonant Switching
	Length	42mm
	Width	16.13mm
	Standards/Approvals	IEC61249-2-21, RoHS
	Height	5.21mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type IGBT Single Transistor IC
	Maximum Continuous Collector Current Ic 20A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 288W
	Package Type PG-TO-247
	Pin Count 3
	Maximum Collector Emitter Saturation Voltage VceSAT 1.55V
	Maximum Gate Emitter Voltage VGEO ±20 %
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Series Resonant Switching
	Length 42mm
	Width 16.13mm
	Standards/Approvals IEC61249-2-21, RoHS
	Height 5.21mm
	Automotive Standard No

Datasheet - IHW20N120R5XKSA1

Infineon Resonant Switching Series IGBT Single Transistor IC, 1200V Max Collector Emitter Voltage, 20A Max Continuous Collector Current - IHW20N120R5XKSA1

This IGBT single-transistor IC is a high-voltage switching device designed for power conversion and control in demanding electrical systems. It operates across a wide temperature span and is intended for applications requiring elevated voltage handling and substantial continuous current capacity. The component is supplied in a PG-TO-247 package and complies with specified material and hazardous-substance standards.

Features and Benefits:

• 1200 V collector-emitter withstand enables high-voltage switching
• 20 A continuous collector current supports sustained power delivery
• 1.55 V Vce(sat) reduces conduction losses during on-state operation
• 288 W maximum power dissipation allows heavy-load thermal margin
• ±20 V gate-emitter rating permits standard gate-drive amplitudes
• Operates from −40 °C to 175 °C for extended temperature resilience

Applications

• Suitable for resonant switching topologies in power converters
• Used for 1200 V 20 A IGBT transistor roles in industrial inverters
• Ideal for high-power IGBT 288 W modules in motor drives
• Can be used for PG-TO-247 IGBT module replacements in assemblies
• Appropriate for high-temperature IGBT −40 to 175 °C environments

What packaging is provided for straightforward board or heatsink mounting?

It is supplied in a PG-TO-247 package suitable for standard through-hole mounting and conventional heatsinking.

Which material and hazardous-substance standards does it meet?

The device is RoHS-compliant and meets IEC 61249-2-21 material specifications.

What electrical limit defines gate-drive safety?

The gate-emitter voltage is limited to ±20 V to prevent gate oxide stress.

How should designers assess thermal capacity for sustained operation?

Use the 288 W maximum power dissipation rating to size heatsinks and cooling for continuous loads.

What temperature extremes can the device tolerate in operation?

It functions from a minimum of −40 °C up to a maximum of 175 °C for elevated-temperature applications.