Infineon, Type N-Channel IGBT, 600 A 1200 V, 7-Pin AG-62MM, Surface
- RS 제품 번호:
- 222-4793
- 제조사 부품 번호:
- FF600R12KE4BOSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
현재 비가용
죄송합니다. 언제 재입고될지 모릅니다.
- RS 제품 번호:
- 222-4793
- 제조사 부품 번호:
- FF600R12KE4BOSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Maximum Continuous Collector Current Ic | 600A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Package Type | AG-62MM | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 7 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 106.4mm | |
| Height | 30.9mm | |
| Standards/Approvals | UL Approved (E83335) | |
| Series | FF600R12KE4 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Maximum Continuous Collector Current Ic 600A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Package Type AG-62MM | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 7 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.2V | ||
Maximum Operating Temperature 150°C | ||
Length 106.4mm | ||
Height 30.9mm | ||
Standards/Approvals UL Approved (E83335) | ||
Series FF600R12KE4 | ||
Automotive Standard No | ||
The Infineon 62 mm 1200 V, 600 A dual IGBT module with TRENCHSTOP™ IGBT4 and emitter controlled diode. Also available as variation with common emitter:FF600R12KE4_E.
RoHS compliant
4 kV AC 1 min Insulation
Package with CTI > 400
High Creep age and Clearance Distances
UL/CSA Certification with UL1557 E83336
관련된 링크들
- Infineon FF600R12KE4BOSA1, Type N-Channel IGBT, 600 A 1200 V, 7-Pin AG-62MM, Surface
- Infineon Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis
- Infineon Half Bridge IGBT, 500 A 1700 V AG-62MMHB-411, Chassis
- Infineon FF600R12IP4BOSA1 Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis
- Infineon FF600R12IE4BOSA1 Dual IGBT, 600 A 1200 V AG-PRIME2, Chassis
- Infineon FF900R12ME7B11BOSA1, Type N-Channel IGBT, 900 A 1200 V, 11-Pin AG-ECONOD, Surface
- Infineon FF500R17KE4BOSA1 Half Bridge IGBT, 500 A 1700 V AG-62MMHB-411, Chassis
- Infineon FF600R12KE7EHPSA1 Single Collector, Single Emitter, Single Gate IGBT, 600 A 1200 V, 3-Pin AG-62MMHB, Through
