Infineon FF600R12KE7BPSA1, Type N-Channel Single Collector IGBT, 600 A 1200 V, 3-Pin AG-62MMHB, Through Hole
- RS 제품 번호:
- 284-962
- 제조사 부품 번호:
- FF600R12KE7BPSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 tray of 10 units)*
₩3,698,467.60
재고있음
- 10 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tray* |
|---|---|---|
| 10 + | ₩369,846.76 | ₩3,698,467.60 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 284-962
- 제조사 부품 번호:
- FF600R12KE7BPSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 600A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Configuration | Single Collector | |
| Package Type | AG-62MMHB | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.75V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60747, IEC 60749, IEC 60068 | |
| Length | 62mm | |
| Width | 61.4 mm | |
| Height | 30.9mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 600A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Configuration Single Collector | ||
Package Type AG-62MMHB | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.75V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60747, IEC 60749, IEC 60068 | ||
Length 62mm | ||
Width 61.4 mm | ||
Height 30.9mm | ||
Automotive Standard No | ||
The Infineon IGBT Module is a 62 mm 1200 V, 600 A dual low saturation and fast trench IGBT module with TRENCHSTOP IGBT7 and emitter controlled diode. Existing packages with higher current capability, allows to increase inverter output power with same frame size. Reduced system costs by simplification of the inverter systems.
Highest power density
Best in class VCEsat
High creepage and clearance distances
Isolated base plate
Standard housing
RoHS compliant
4 kV AC 1 min Insulation
관련된 링크들
- Infineon FF600R12KE7BPSA1 Single Collector, Single Emitter, Single Gate IGBT, 600 A 1200 V, 3-Pin AG-62MMHB, Through
- Infineon FF600R12KE7EHPSA1 Single Collector, Single Emitter, Single Gate IGBT, 600 A 1200 V, 3-Pin AG-62MMHB, Through
- Infineon FF450R12KE7HPSA1 Single Collector, Single Emitter, Single Gate IGBT, 450 A 1200 V, 3-Pin AG-62MMHB, Through
- Infineon FF800R12KE7EHPSA1 Single Collector, Single Emitter, Single Gate IGBT, 800 A 1200 V, 3-Pin AG-62MMHB, Through
- Infineon FF800R12KE7HPSA1 Single Collector, Single Emitter, Single Gate IGBT, 800 A 1200 V, 3-Pin AG-62MMHB, Through
- Infineon F3L225R12W3H3B11BPSA1 Single Collector, Single Emitter, Single Gate IGBT, 225 A 1200 V AG-62MMHB, Through Hole
- Infineon FF200R17KE4HOSA1 Common Emitter IGBT, 200 A 1700 V, 7-Pin 62MMHB, Panel Mount
- Infineon FF500R17KE4BOSA1 IGBT 1700 V AG-62MMHB-411
