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Infineon FF600R12ME4B72BOSA1, N-Channel IGBT Module, 600 A 1200 V, 11-Pin ECONODUAL, Surface

RS 제품 번호:: 218-4341
제조사 부품 번호:: FF600R12ME4B72BOSA1
제조업체:: Infineon

Infineon FF600R12ME4B72BOSA1, N-Channel IGBT Module, 600 A 1200 V, 11-Pin ECONODUAL, Surface

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Subtotal (1 unit)*

₩323,160.00

일시적 품절

2027년 3월 24일 부터 배송

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RS 제품 번호:: 218-4341
제조사 부품 번호:: FF600R12ME4B72BOSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	IGBT Module
	Maximum Continuous Collector Current Ic	600A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	20mW
	Number of Transistors	2
	Package Type	ECONODUAL
	Mount Type	Surface
	Channel Type	N
	Pin Count	11
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.1V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Series	FF600R12ME4_B72
	Standards/Approvals	No
	Width	62mm
	Height	20.8mm
	Length	152mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type IGBT Module
	Maximum Continuous Collector Current Ic 600A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 20mW
	Number of Transistors 2
	Package Type ECONODUAL
	Mount Type Surface
	Channel Type N
	Pin Count 11
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Series FF600R12ME4_B72
	Standards/Approvals No
	Width 62mm
	Height 20.8mm
	Length 152mm
	Automotive Standard No

Datasheet - FF600R12ME4B72BOSA1

Infineon FF600R12ME4_B72 Series IGBT Module, 1200V Collector-Emitter Voltage, 600A Collector Current - FF600R12ME4B72BOSA1

This IGBT module provides high-voltage switching for demanding power applications, combining dual-transistor topology with a Compact surface-mount ECONODUAL package. It is designed to handle large continuous currents while operating across a wide temperature range, making it suitable for industrial power conversion and motor-control environments.

Features and Benefits:

• 1200 V blocking voltage delivers high-voltage switching capability
• 600 A continuous collector current enables heavy-load handling
• Low VCE(sat) 2.1 V reduces conduction losses during operation
• 20 mW maximum power dissipation minimises internal power loss
• Type N gate-emitter 20 V rating allows standard gate-drive voltages
• Dual-transistor configuration supports half-bridge and inverter topologies

Applications

• Suitable for industrial motor-drive power stages
• Used with high-voltage inverter systems in industry
• Ideal for heavy-current converter modules
• Can be used for power supplies requiring robust switching
• Suitable for traction and large-drive requiring dual switches

What pin configuration does it use for PCB integration?

The device uses an 11-pin layout formatted for surface mounting in an ECONODUAL package.

What are the allowable ambient temperature limits for operation?

It operates reliably between -40 °C and 150 °C maximum operating temperature.

How many transistors are incorporated and what topology does that support?

The module contains two transistors enabling dual-switch arrangements such as half-bridges.

What physical size should I allow for in the assembly layout?

The component measures 152 x 62 x 20.8 mm so allocate corresponding space on the assembly.