제조사부품번호

Infineon FF1800R12IE5PBPSA1 Dual IGBT Module, 1.8 kA 1200 V, 10-Pin PRIME3+

RS 제품 번호:: 218-4329
제조사 부품 번호:: FF1800R12IE5PBPSA1
제조업체:: Infineon

Infineon FF1800R12IE5PBPSA1 Dual IGBT Module, 1.8 kA 1200 V, 10-Pin PRIME3+

대량 구매 할인 기용 가능

Subtotal (1 tray of 3 units)*

₩4,786,910.52

현재 액세스할 수 없는 재고 정보

수량	한팩당	Per Tray*
3 - 3	₩1,595,636.84	₩4,786,912.40
6 - 9	₩1,547,772.04	₩4,643,318.00
12 +	₩1,501,336.04	₩4,504,010.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 218-4329
제조사 부품 번호:: FF1800R12IE5PBPSA1
제조업체:: Infineon

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Maximum Continuous Collector Current	1.8 kA
	Maximum Collector Emitter Voltage	1200 V
	Maximum Gate Emitter Voltage	20V
	Maximum Power Dissipation	20 mW
	Number of Transistors	2
	Configuration	Dual
	Package Type	PRIME3+
	Channel Type	N
	Pin Count	10
	Transistor Configuration	Dual

	모두 선택
	브랜드 Infineon
	Maximum Continuous Collector Current 1.8 kA
	Maximum Collector Emitter Voltage 1200 V
	Maximum Gate Emitter Voltage 20V
	Maximum Power Dissipation 20 mW
	Number of Transistors 2
	Configuration Dual
	Package Type PRIME3+
	Channel Type N
	Pin Count 10
	Transistor Configuration Dual

Datasheet - FF1800R12IE5PBPSA1

The Infineon PrimePack dual IGBT module with TRENCHSTOP IGBT5 and .XT interconnection technology. It has collector emitter voltage of 1800 V. The N-Channel TRENCHSTOP and field stop IGBT Modules are suitable for hard switching and soft switching applications such as high power converters, UPS system, motor drives and solar applications.

Copper bonds for high current carrying capabilities
Sintering of chips for highest power cycling capabilities
Total losses reduced by up to 20%
Less cooling effort for same output power
Enables higher system overload conditions

Infineon FF1800R12IE5PBPSA1 Dual IGBT Module, 1.8 kA 1200 V, 10-Pin PRIME3+

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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