Infineon, Type N-Channel Inverter, 1800 A 1200 V, 10-Pin PRIME3, Surface
- RS 제품 번호:
- 218-4329
- 제조사 부품 번호:
- FF1800R12IE5PBPSA1
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 tray of 3 units)*
₩5,289,231.48
일시적 품절
- 2026년 7월 17일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tray* |
|---|---|---|
| 3 - 3 | ₩1,763,077.16 | ₩5,289,229.60 |
| 6 - 9 | ₩1,710,192.76 | ₩5,130,576.40 |
| 12 + | ₩1,658,880.04 | ₩4,976,642.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 218-4329
- 제조사 부품 번호:
- FF1800R12IE5PBPSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Inverter | |
| Maximum Continuous Collector Current Ic | 1800A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 20mW | |
| Number of Transistors | 2 | |
| Package Type | PRIME3 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 10 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.6V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 38.25mm | |
| Length | 247mm | |
| Standards/Approvals | No | |
| Series | FF1800R12IE5P | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Inverter | ||
Maximum Continuous Collector Current Ic 1800A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 20mW | ||
Number of Transistors 2 | ||
Package Type PRIME3 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 10 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.6V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 38.25mm | ||
Length 247mm | ||
Standards/Approvals No | ||
Series FF1800R12IE5P | ||
Automotive Standard No | ||
The Infineon PrimePack dual IGBT module with TRENCHSTOP IGBT5 and .XT interconnection technology. It has collector emitter voltage of 1800 V. The N-Channel TRENCHSTOP and field stop IGBT Modules are suitable for hard switching and soft switching applications such as high power converters, UPS system, motor drives and solar applications.
Copper bonds for high current carrying capabilities
Sintering of chips for highest power cycling capabilities
Total losses reduced by up to 20%
Less cooling effort for same output power
Enables higher system overload conditions
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