Infineon IHW40N120R5XKSA1, N-Channel Resonant Switching, 80 A 1200 V, 3-Pin TO-247, Through Hole

RS 제품 번호:: 215-6641
Distrelec 제품 번호:: 304-31-141
제조사 부품 번호:: IHW40N120R5XKSA1
제조업체:: Infineon

Infineon IHW40N120R5XKSA1, N-Channel Resonant Switching, 80 A 1200 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

₩18,840.00

2,102 개 단위 배송 준비 완료

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수량	한팩당	한팩당*
2 - 8	₩9,420.00	₩18,840.00
10 - 98	₩9,220.00	₩18,440.00
100 - 248	₩8,980.00	₩17,960.00
250 - 498	₩8,780.00	₩17,560.00
500 +	₩8,550.00	₩17,100.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 215-6641
Distrelec 제품 번호:: 304-31-141
제조사 부품 번호:: IHW40N120R5XKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Maximum Continuous Collector Current Ic	80A
	Product Type	Resonant Switching
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	394W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Maximum Collector Emitter Saturation Voltage VceSAT	1.85V
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	±25 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	Pb-free lead plating, IEC61249-2-21, RoHS, JESD-022
	Width	16.13mm
	Series	IHW40N120R5
	Length	42mm
	Height	5.21mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Maximum Continuous Collector Current Ic 80A
	Product Type Resonant Switching
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 394W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Maximum Collector Emitter Saturation Voltage VceSAT 1.85V
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO ±25 V
	Maximum Operating Temperature 175°C
	Standards/Approvals Pb-free lead plating, IEC61249-2-21, RoHS, JESD-022
	Width 16.13mm
	Series IHW40N120R5
	Length 42mm
	Height 5.21mm
	Automotive Standard No

Datasheet-IHW40N120R5XKSA1

Infineon IHW40N120R5 Series Resonant Switching, 1200V Collector-Emitter Voltage, 80A Continuous Collector Current - IHW40N120R5XKSA1

This resonant switching device is a high-voltage power MOSFET designed for use in demanding switching applications. It operates as an N-channel transistor in a through-hole TO-247 package and is intended for circuits requiring robust current handling and elevated temperature endurance. The component suits designers needing a discrete power transistor for resonant converters and other high-energy switching topologies.

Features and Benefits:

• 1200V blocking capability enables high-voltage system designs
• 80A continuous current supports heavy load handling
• 1.85V VCE(sat) reduces conduction losses at high currents
• ±25V gate-emitter rating allows flexible drive voltages
• 394W power dissipation permits sustained thermal loading

Applications

• Suitable for resonant AC-DC converter stages
• Ideal for high-power inverter output stages
• Used for industrial power supplies with high stress
• Can be used for soft-switching topologies in SMPS
• Suitable for laboratory power electronics test rigs

What mounting and pin configuration does it use?

The device is supplied in a TO-247 package with three pins and is intended for through-hole mounting on appropriate copper-backed substrates.

What thermal range can it withstand during operation?

It is rated to operate from -40°C up to 175°C junction temperature for wide thermal margin in harsh environments.

Which standards are referenced for material and board compatibility?

The component conforms to IEC 61249-2-21 laminate guidance and meets RoHS restrictions along with Pb-free lead-plating practices.

How does the gate-emitter limit affect drive circuitry?

The ±25V maximum gate-emitter rating sets the allowable peak gate swing and necessitates gate drivers that keep gate stress within that window.