STMicroelectronics STGWA30HP65FB, N-Channel IGBT, 30 A 650 V, 3-Pin TO-247, Through Hole
- RS 제품 번호:
- 202-5514
- 제조사 부품 번호:
- STGWA30HP65FB
- 제조업체:
- STMicroelectronics
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- RS 제품 번호:
- 202-5514
- 제조사 부품 번호:
- STGWA30HP65FB
- 제조업체:
- STMicroelectronics
사양
참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 260W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.9mm | |
| Width | 21.1mm | |
| Standards/Approvals | RoHS | |
| Series | STG | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 260W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.9mm | ||
Width 21.1mm | ||
Standards/Approvals RoHS | ||
Series STG | ||
Height 5.1mm | ||
Automotive Standard No | ||
The STMicroelectronics high speed HB series IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.
Low thermal resistance
Very fast soft recovery antiparallel diode
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