STMicroelectronics STGWA30HP65FB, Type N-Channel IGBT, 30 A 650 V, 3-Pin TO-247, Through Hole
- RS 제품 번호:
- 202-5515
- 제조사 부품 번호:
- STGWA30HP65FB
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 pack of 5 units)*
₩39,235.60
재고있음
- 5 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 5 - 5 | ₩7,847.12 | ₩39,235.60 |
| 10 - 10 | ₩7,651.60 | ₩38,258.00 |
| 15 + | ₩7,531.28 | ₩37,656.40 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 202-5515
- 제조사 부품 번호:
- STGWA30HP65FB
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 260W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | STG | |
| Length | 15.9mm | |
| Width | 21.1 mm | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 260W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series STG | ||
Length 15.9mm | ||
Width 21.1 mm | ||
Height 5.1mm | ||
Automotive Standard No | ||
The STMicroelectronics high speed HB series IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.
Low thermal resistance
Very fast soft recovery antiparallel diode
관련된 링크들
- STMicroelectronics STGWA30HP65FB IGBT, 30 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA30HP65FB2 IGBT 650 V, 3-Pin TO-247 long leads
- STMicroelectronics STGWA50HP65FB2 IGBT, 86 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247
- STMicroelectronics STGWA30H65DFB2 IGBT, 50 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA40IH65DF IGBT, 40 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA75H65DFB2 IGBT, 115 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA100H65DFB2 IGBT, 145 A 650 V, 3-Pin TO-247