STMicroelectronics STGWA80H65DFBAG IGBT, 80 A 650 V, 3-Pin TO-247
- RS 제품 번호:
- 261-5072
- 제조사 부품 번호:
- STGWA80H65DFBAG
- 제조업체:
- STMicroelectronics
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩9,418.80
일시적 품절
- 2027년 2월 15일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 4 | ₩9,418.80 |
| 5 - 9 | ₩8,948.80 |
| 10 - 14 | ₩8,497.60 |
| 15 - 19 | ₩8,328.40 |
| 20 + | ₩8,159.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 261-5072
- 제조사 부품 번호:
- STGWA80H65DFBAG
- 제조업체:
- STMicroelectronics
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 535W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 15V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.8mm | |
| Width | 21 mm | |
| Height | 5mm | |
| Series | STGWA | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 STMicroelectronics | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 535W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 15V | ||
Maximum Operating Temperature 175°C | ||
Length 15.8mm | ||
Width 21 mm | ||
Height 5mm | ||
Series STGWA | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT is developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
AEC-Q101 qualified
High-speed switching series
Maximum junction temperature TJ is 175 degree C
Minimized tail current
Tight parameter distribution
Positive temperature VCE(sat) coefficient
Soft and very fast recovery antiparallel diode
관련된 링크들
- STMicroelectronics STGWA80H65DFBAG IGBT, 80 A 1.65 V, 3-Pin TO-247, Through Hole
- STMicroelectronics STGWA100H65DFB2 IGBT, 145 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA75H65DFB2 IGBT, 115 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA30H65DFB2 IGBT, 50 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247
- STMicroelectronics STGWA30HP65FB IGBT, 30 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA40IH65DF IGBT, 40 A 650 V, 3-Pin TO-247