onsemi FGAF40N60UFTU, N-Channel IGBT, 40 A 600 V, 3-Pin TO-3PF, Through Hole
- RS 제품 번호:
- 759-9257
- 제조사 부품 번호:
- FGAF40N60UFTU
- 제조업체:
- onsemi
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대량 구매 할인 받기
8개 더 담고 ₩1,440.00 할인 받기
View bulk pricing optionsSubtotal (1 unit)*
₩6,660.00
마지막 RS 재고
- 6 개 단위 배송 준비 완료
- 2026년 11월 17일 부터 최종 408 개 단위 배송
수량 | 한팩당 | 절감 |
|---|---|---|
| 1 - 7 | ₩6,660.00 | - |
| 8 - 14 | ₩6,480.00 | ₩1,440.00 |
| 15 + | ₩6,380.00 | ₩4,200.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 759-9257
- 제조사 부품 번호:
- FGAF40N60UFTU
- 제조업체:
- onsemi
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Maximum Continuous Collector Current Ic | 40A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 100W | |
| Package Type | TO-3PF | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 130ns | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC, RoHS | |
| Series | UF | |
| Width | 23mm | |
| Length | 26.5mm | |
| Height | 5.45mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Maximum Continuous Collector Current Ic 40A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 100W | ||
Package Type TO-3PF | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 130ns | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC, RoHS | ||
Series UF | ||
Width 23mm | ||
Length 26.5mm | ||
Height 5.45mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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