Infineon IKP06N60TXKSA1 IGBT, 6 A 600 V, 3-Pin TO-220, Through Hole

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Subtotal (1 tube of 50 units)*

₩85,164.00

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Per Tube*
50 - 200₩1,703.28₩85,201.60
250 +₩1,534.08₩76,685.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
145-8585
제조사 부품 번호:
IKP06N60TXKSA1
제조업체:
Infineon
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브랜드

Infineon

Maximum Continuous Collector Current

6 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

88 W

Package Type

TO-220

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

10.36 x 4.57 x 15.95mm

Gate Capacitance

368pF

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+175 °C

Energy Rating

0.335mJ

COO (Country of Origin):
MY

Infineon TrenchStop IGBT Transistors, 600 and 650V


A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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