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Infineon, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

RS 제품 번호:: 145-9169
제조사 부품 번호:: IGW50N65H5FKSA1
제조업체:: Infineon

Infineon, Type N-Channel IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 tube of 30 units)*

₩108,720.00

120 개 단위 배송 준비 완료

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수량	한팩당	Per Tube*
30 - 120	₩3,624.00	₩108,702.00
150 +	₩3,262.00	₩97,860.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 145-9169
제조사 부품 번호:: IGW50N65H5FKSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Maximum Continuous Collector Current Ic	80A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	650V
	Maximum Power Dissipation Pd	305W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.1V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, JEDEC
	Series	TrenchStop
	Energy Rating	0.7mJ
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Maximum Continuous Collector Current Ic 80A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 650V
	Maximum Power Dissipation Pd 305W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, JEDEC
	Series TrenchStop
	Energy Rating 0.7mJ
	Automotive Standard No

COO (Country of Origin):: MY

Infineon TrenchStop Series IGBT, 650V Maximum Collector Emitter Voltage, 80A Max Continuous Collector Current - IGW50N65H5FKSA1

This insulated-gate bipolar transistor is a high-voltage switching device designed for power conversion and control in demanding electronics. It is configured as an N-channel power transistor in a through-hole TO-247 package and serves applications requiring robust collector-emitter voltage handling and elevated current capacity. The component complies with common industry environmental and packaging norms, and its thermal endurance allows use across a wide ambient range.

Features and Benefits:

• 650V collector-emitter capability for high-voltage switching applications
• 80A continuous collector current to handle substantial load currents
• 2.1V saturation voltage minimises conduction losses for efficiency
• 305W power dissipation supports high-power operation
• ±20V gate-emitter rating secures gate-drive flexibility
• 0.7mJ energy rating provides avalanche energy tolerance

Applications

• Suitable for motor-drive inverter stages in industrial equipment
• Used with high-voltage power supplies and converters
• Ideal for switch-mode power in traction electronics
• Can be used for industrial welding and induction heating control
• Suitable for power-factor correction and renewable-energy inverters

What temperature extremes can it withstand in operation?

The device operates over a wide temperature span from -40°C up to 175°C, enabling use in harsh thermal environments.

Which mounting approach is required for thermal management?

It is supplied in a TO-247 through-hole package intended for heatsinking to manage the 305W maximum dissipation.

Which standards cover its environmental and packaging acceptance?

The component meets RoHS restrictions and adheres to JEDEC packaging norms.

How many electrical connections does it use and what is the channel type?

It presents three pins for connection and is implemented as an N-type channel transistor.