Semikron Danfoss SEMiX603GB12E4p, Type N-Channel IGBT Module, 1.1 kA 1200 V, 11-Pin SEMiX3p, Surface
- RS 제품 번호:
- 122-0393
- 제조사 부품 번호:
- SEMiX603GB12E4p
- 제조업체:
- Semikron Danfoss
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩775,846.50
일시적 품절
- 2026년 5월 12일 부터 6 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 1 | ₩775,846.50 |
| 2 - 5 | ₩747,981.00 |
| 6 - 11 | ₩713,797.50 |
| 12 + | ₩698,256.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 122-0393
- 제조사 부품 번호:
- SEMiX603GB12E4p
- 제조업체:
- Semikron Danfoss
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Semikron Danfoss | |
| Maximum Continuous Collector Current Ic | 1.1kA | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Package Type | SEMiX3p | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 11 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.4V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 17mm | |
| Length | 150mm | |
| Standards/Approvals | No | |
| Series | Trench | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Semikron Danfoss | ||
Maximum Continuous Collector Current Ic 1.1kA | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Package Type SEMiX3p | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 11 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.4V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 17mm | ||
Length 150mm | ||
Standards/Approvals No | ||
Series Trench | ||
Automotive Standard No | ||
SEMiX® Dual IGBT Modules
Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387
• Low profile solder-free mounting package
• Trenchgate technology IGBTs
• VCE(sat) has positive temperature coefficient
• High short circuit current capability
• Press-fit pins as auxiliary contacts
• UL recognized
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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