Semikron Danfoss SKM200GB176D Dual Half Bridge IGBT Module, 260 A 1700 V, 7-Pin SEMITRANS3, Panel Mount
- RS 제품 번호:
- 505-3217
- 제조사 부품 번호:
- SKM200GB176D
- 제조업체:
- Semikron Danfoss
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대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩505,400.40
마지막 RS 재고
- 31 개 단위 배송 준비 완료
- 2026년 1월 05일 부터 최종 86 개 단위 배송
수량 | 한팩당 |
|---|---|
| 1 - 9 | ₩505,400.40 |
| 10 - 19 | ₩492,936.00 |
| 20 + | ₩480,697.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 505-3217
- 제조사 부품 번호:
- SKM200GB176D
- 제조업체:
- Semikron Danfoss
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Semikron Danfoss | |
| Maximum Continuous Collector Current | 260 A | |
| Maximum Collector Emitter Voltage | 1700 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Configuration | Dual Half Bridge | |
| Package Type | SEMITRANS3 | |
| Mounting Type | Panel Mount | |
| Channel Type | N | |
| Pin Count | 7 | |
| Transistor Configuration | Series | |
| Dimensions | 106.4 x 61.4 x 30mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +150 °C | |
| 모두 선택 | ||
|---|---|---|
브랜드 Semikron Danfoss | ||
Maximum Continuous Collector Current 260 A | ||
Maximum Collector Emitter Voltage 1700 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Configuration Dual Half Bridge | ||
Package Type SEMITRANS3 | ||
Mounting Type Panel Mount | ||
Channel Type N | ||
Pin Count 7 | ||
Transistor Configuration Series | ||
Dimensions 106.4 x 61.4 x 30mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +150 °C | ||
Dual IGBT Modules
A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies.
Compact SEMITOP® package
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology
Suitable for switching frequencies up to 12kHz
Insulated copper baseplate using Direct Bonded Copper technology

IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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