Semikron Danfoss SEMiX303GB12E4p Series IGBT Module, 469 A 1200 V, 11-Pin SEMiX®3p, Through Hole
- RS 제품 번호:
- 122-0391
- 제조사 부품 번호:
- SEMiX303GB12E4p
- 제조업체:
- Semikron Danfoss
Subtotal (1 unit)*
₩508,959.24
일시적 품절
- 2026년 6월 05일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 + | ₩508,959.24 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 122-0391
- 제조사 부품 번호:
- SEMiX303GB12E4p
- 제조업체:
- Semikron Danfoss
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Semikron Danfoss | |
| Maximum Continuous Collector Current | 469 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Configuration | Series | |
| Package Type | SEMiX®3p | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 11 | |
| Transistor Configuration | Series | |
| Dimensions | 150 x 62.4 x 17mm | |
| Minimum Operating Temperature | -40 °C | |
| Maximum Operating Temperature | +175 °C | |
| 모두 선택 | ||
|---|---|---|
브랜드 Semikron Danfoss | ||
Maximum Continuous Collector Current 469 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage 20V | ||
Configuration Series | ||
Package Type SEMiX®3p | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 11 | ||
Transistor Configuration Series | ||
Dimensions 150 x 62.4 x 17mm | ||
Minimum Operating Temperature -40 °C | ||
Maximum Operating Temperature +175 °C | ||
SEMiX® Dual IGBT Modules
Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387
For suitable press-fit gate driver modules see 122-0385 to 122-0387
Low profile solder-free mounting package
Trenchgate technology IGBTs
VCE(sat) has positive temperature coefficient
High short circuit current capability
Press-fit pins as auxiliary contacts
UL recognized
Trenchgate technology IGBTs
VCE(sat) has positive temperature coefficient
High short circuit current capability
Press-fit pins as auxiliary contacts
UL recognized
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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