Semikron Danfoss SEMiX303GB12E4p, Type N-Channel IGBT Module, 469 A 1200 V, 11-Pin SEMiX3p, Surface
- RS 제품 번호:
- 122-0391
- 제조사 부품 번호:
- SEMiX303GB12E4p
- 제조업체:
- Semikron Danfoss
Subtotal (1 unit)*
₩527,904.00
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 |
|---|---|
| 1 + | ₩527,904.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 122-0391
- 제조사 부품 번호:
- SEMiX303GB12E4p
- 제조업체:
- Semikron Danfoss
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Semikron Danfoss | |
| Maximum Continuous Collector Current Ic | 469A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Package Type | SEMiX3p | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 11 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.4V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | Trench | |
| Length | 150mm | |
| Height | 17mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Semikron Danfoss | ||
Maximum Continuous Collector Current Ic 469A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Package Type SEMiX3p | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 11 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.4V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series Trench | ||
Length 150mm | ||
Height 17mm | ||
Automotive Standard No | ||
SEMiX® Dual IGBT Modules
Dual IGBT Modules from Semikron in modern low-profile SEMiX® packages suitable for half-bridge power control applications. The modules use solder-free spring or press-fit contacts to allow for a gate driver mounted directly on top of the module, saving space and offering greater connection reliability. Typical applications include AC inverter drives, UPS, Electronic Welding and Renewable Energy Systems.
For suitable press-fit gate driver modules see 122-0385 to 122-0387
• Low profile solder-free mounting package
• Trenchgate technology IGBTs
• VCE(sat) has positive temperature coefficient
• High short circuit current capability
• Press-fit pins as auxiliary contacts
• UL recognized
IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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