Infineon FF300R12KE3HOSA1 Series IGBT Module, 440 A 1200 V AG-62MM-1, Panel Mount

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Subtotal (1 tray of 10 units)*

₩2,258,425.20

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  • 2027년 11월 29일 부터 배송
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Per Tray*
10 - 40₩225,842.52₩2,258,425.20
50 +₩221,324.88₩2,213,248.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
166-0903
제조사 부품 번호:
FF300R12KE3HOSA1
제조업체:
Infineon
제품 정보를 선택해 유사 제품을 찾기
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브랜드

Infineon

Maximum Continuous Collector Current

440 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

1450 W

Package Type

AG-62MM-1

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Transistor Configuration

Series

Dimensions

106.4 x 61.4 x 30.9mm

Maximum Operating Temperature

+125 °C

Minimum Operating Temperature

-40 °C

COO (Country of Origin):
MY

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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