Infineon FS03MR12A7MA2BHPSA1, Type N-Channel Half Bridge IGBT, 310 A 1200 V HybridPACK Drive G2, Screw
- RS 제품 번호:
- 349-191
- 제조사 부품 번호:
- FS03MR12A7MA2BHPSA1
- 제조업체:
- Infineon
Subtotal (1 unit)*
₩3,399,792.00
일시적 품절
- 2026년 11월 23일 부터 배송
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수량 | 한팩당 |
|---|---|
| 1 + | ₩3,399,792.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 349-191
- 제조사 부품 번호:
- FS03MR12A7MA2BHPSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 310A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 6 | |
| Maximum Power Dissipation Pd | 20mW | |
| Configuration | Half Bridge | |
| Package Type | HybridPACK Drive G2 | |
| Mount Type | Screw | |
| Channel Type | Type N | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 19 V | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | RoHS, UL 94 V0 | |
| Width | 100.5 mm | |
| Length | 154.5mm | |
| Automotive Standard | AQG 324 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 310A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 6 | ||
Maximum Power Dissipation Pd 20mW | ||
Configuration Half Bridge | ||
Package Type HybridPACK Drive G2 | ||
Mount Type Screw | ||
Channel Type Type N | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 19 V | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals RoHS, UL 94 V0 | ||
Width 100.5 mm | ||
Length 154.5mm | ||
Automotive Standard AQG 324 | ||
- COO (Country of Origin):
- DE
The Infineon Power module implements the second generation CoolSiC Automotive MOSFET 1200V. Its an optimized for electric drive train applications, from mid to high range automotive power classes to high range commercial, construction and agricultural vehicles.
High power density
Direct cooled PinFin base plate
Integrated temp sensing diode
PressFIT contact technology
Compact design
Higher temperature cycling capability
Integrated diode temperature sensors
New plastic material
Better temperature capability
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