Infineon IGBT Module 750 V HybridPACK
- RS 제품 번호:
- 244-5877
- 제조사 부품 번호:
- FS950R08A6P2BBPSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tray of 6 units)*
₩4,034,833.44
일시적 품절
- 2026년 9월 25일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tray* |
|---|---|---|
| 6 - 6 | ₩672,472.24 | ₩4,034,837.20 |
| 12 - 12 | ₩659,024.60 | ₩3,954,147.60 |
| 18 + | ₩645,842.04 | ₩3,875,056.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 244-5877
- 제조사 부품 번호:
- FS950R08A6P2BBPSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 750V | |
| Number of Transistors | 6 | |
| Maximum Power Dissipation Pd | 870W | |
| Package Type | HybridPACK | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, IEC24720 and IEC16022 | |
| Series | FS950R08A6P2BBPSA1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 750V | ||
Number of Transistors 6 | ||
Maximum Power Dissipation Pd 870W | ||
Package Type HybridPACK | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, IEC24720 and IEC16022 | ||
Series FS950R08A6P2BBPSA1 | ||
Automotive Standard No | ||
The infineon IGBT module drive is a very compact six-pack module (750 V/950 A) optimized for hybridand electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive micro-pattern trench-field-stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz.
Electrical Features
Blocking voltage 750 V
Low VCEsat
Low switching losses
Low Qg and crss
Low inductive design Tvj op = 150° C
Short-time extended operation temperature Tvj op = 175°C
Mechanical features
4.2kV DC 1sec insulation
High creepage and clearance distances
Compact design
High power density
Direct cooled pinFin base plate
Guiding elements for PCB and cooler assembly
Integrated NTC temperature sensor
Pressfit contact technology
RoHS compliant
UL 94 V0 module frame
관련된 링크들
- Infineon FS950R08A6P2BBPSA1 IGBT Module 750 V HybridPACK
- Infineon, Type N-Channel IGBT Module, 820 A 750 V, 20-Pin Module, Clamp
- Infineon FS820R08A6P2BBPSA1, Type N-Channel IGBT Module, 820 A 750 V, 20-Pin Module, Clamp
- Infineon HybridPACK Drive G2 Type N-Channel MOSFET, 620 A, 750 V Enhancement HybridPACK Drive G2 FS01MR08A8MA2LBCHPSA1
- Infineon HybridPACK Drive G2 Type N-Channel MOSFET, 390 A, 1200 V Enhancement HybridPACK Drive G2 FS02MR12A8MA2BBPSA1
- Infineon, Type N-Channel IGBT Module, 450 A 750 V, 33-Pin AG-HYBRIDD, Through Hole
- Infineon FS820R08A6P2LBBPSA1, Type N-Channel IGBT Module, 450 A 750 V, 33-Pin AG-HYBRIDD, Through Hole
- Infineon, Type N-Channel IGBT Module, 250 A 1200 V, 33-Pin AG-HYBRIDD, Through Hole
