Infineon IGBT Module 750 V HybridPACK
- RS 제품 번호:
- 244-5877
- 제조사 부품 번호:
- FS950R08A6P2BBPSA1
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
대량 구매 할인 기용 가능
Subtotal (1 tray of 6 units)*
₩4,185,066.60
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | Per Tray* |
|---|---|---|
| 6 - 6 | ₩697,511.10 | ₩4,185,070.50 |
| 12 - 12 | ₩683,562.75 | ₩4,101,376.50 |
| 18 + | ₩669,889.35 | ₩4,019,340.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 244-5877
- 제조사 부품 번호:
- FS950R08A6P2BBPSA1
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 750V | |
| Maximum Power Dissipation Pd | 870W | |
| Number of Transistors | 6 | |
| Package Type | HybridPACK | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, IEC24720 and IEC16022 | |
| Series | FS950R08A6P2BBPSA1 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 750V | ||
Maximum Power Dissipation Pd 870W | ||
Number of Transistors 6 | ||
Package Type HybridPACK | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, IEC24720 and IEC16022 | ||
Series FS950R08A6P2BBPSA1 | ||
Automotive Standard No | ||
The infineon IGBT module drive is a very compact six-pack module (750 V/950 A) optimized for hybridand electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive micro-pattern trench-field-stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz.
Electrical Features
Blocking voltage 750 V
Low VCEsat
Low switching losses
Low Qg and crss
Low inductive design Tvj op = 150° C
Short-time extended operation temperature Tvj op = 175°C
Mechanical features
4.2kV DC 1sec insulation
High creepage and clearance distances
Compact design
High power density
Direct cooled pinFin base plate
Guiding elements for PCB and cooler assembly
Integrated NTC temperature sensor
Pressfit contact technology
RoHS compliant
UL 94 V0 module frame
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