onsemi FGY4L100T120SWD, Type N-Channel Common Emitter IGBT, 200 A 1200 V, 4-Pin TO-247-4L, Through Hole

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Subtotal (1 unit)*

₩20,455.50

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한팩당
1 - 9₩20,455.50
10 - 99₩18,408.00
100 - 499₩16,984.50
500 - 999₩15,756.00
1000 +₩14,098.50

* 참고 가격: 실제 구매가격과 다를 수 있습니다

포장 옵션
RS 제품 번호:
277-076
제조사 부품 번호:
FGY4L100T120SWD
제조업체:
onsemi
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브랜드

onsemi

Maximum Continuous Collector Current Ic

200A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

1.07kW

Number of Transistors

1

Package Type

TO-247-4L

Configuration

Common Emitter

Mount Type

Through Hole

Channel Type

Type N

Pin Count

4

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

22.54mm

Standards/Approvals

RoHS

Length

15.8mm

Automotive Standard

No

COO (Country of Origin):
CN
The ON Semiconductor IGBT and Gen7 Diode in a TO247 4-lead package offer optimal performance with low switching and conduction losses, enabling high-efficiency operations. These components are designed for use in various applications such as solar inverters, uninterruptible power supplies (UPS), and energy storage systems (ESS), providing reliable and efficient power management in these demanding environments.

High current capability

Smooth and optimized switching

Low switching loss

RoHS compliant

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