제조사부품번호

onsemi FGY4L75T120SWD, Type N-Channel Common Emitter IGBT, 75 A 1200 V, 4-Pin TO-247-4L, Through Hole

RS 제품 번호:: 277-080
제조사 부품 번호:: FGY4L75T120SWD
제조업체:: onsemi

onsemi FGY4L75T120SWD, Type N-Channel Common Emitter IGBT, 75 A 1200 V, 4-Pin TO-247-4L, Through Hole

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Subtotal (1 unit)*

₩16,750.80

재고있음

30 개 단위 배송 준비 완료

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수량	한팩당
1 - 9	₩16,750.80
10 - 99	₩15,077.60
100 - 499	₩13,893.20
500 - 999	₩12,896.80
1000 +	₩11,543.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 277-080
제조사 부품 번호:: FGY4L75T120SWD
제조업체:: onsemi

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	onsemi
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	75A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	652W
	Number of Transistors	1
	Configuration	Common Emitter
	Package Type	TO-247-4L
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	4
	Minimum Operating Temperature	-55°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2V
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Operating Temperature	175°C
	Height	22.54mm
	Width	5 mm
	Standards/Approvals	RoHS
	Length	15.8mm
	Automotive Standard	No

	모두 선택
	브랜드 onsemi
	Product Type IGBT
	Maximum Continuous Collector Current Ic 75A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 652W
	Number of Transistors 1
	Configuration Common Emitter
	Package Type TO-247-4L
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 4
	Minimum Operating Temperature -55°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2V
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Operating Temperature 175°C
	Height 22.54mm
	Width 5 mm
	Standards/Approvals RoHS
	Length 15.8mm
	Automotive Standard No

Datasheet - FGY4L75T120SWD

COO (Country of Origin):: CN

The ON Semiconductor IGBT and Gen7 Diode in a TO247 4-lead package offer optimal performance with low switching and conduction losses, enabling high-efficiency operations. These components are designed for use in various applications such as solar inverters, uninterruptible power supplies (UPS), and energy storage systems (ESS), providing reliable and efficient power management in these demanding environments.

High current capability

Smooth and optimized switching

Low switching loss

RoHS compliant

onsemi FGY4L75T120SWD, Type N-Channel Common Emitter IGBT, 75 A 1200 V, 4-Pin TO-247-4L, Through Hole

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