Infineon High Side Gate Driver, 2.3 A 8-Pin 600 V, SOIC

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Subtotal (1 tube of 95 units)*

₩305,584.60

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  • 2027년 1월 26일 부터 배송
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한팩당
Per Tube*
95 - 95₩3,216.68₩305,639.12
190 - 190₩2,735.40₩259,791.56
285 - 475₩2,573.72₩244,520.32
570 - 950₩2,252.24₩213,944.00
1045 +₩2,184.56₩207,533.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
257-5600
제조사 부품 번호:
IRS2181SPBF
제조업체:
Infineon
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브랜드

Infineon

Product Type

Gate Driver

Output Current

2.3A

Pin Count

8

Package Type

SOIC

Fall Time

20ns

Driver Type

High Side

Rise Time

60ns

Minimum Supply Voltage

10V

Maximum Supply Voltage

600V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Series

IRS

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon high and low side driver are high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V

Floating channel designed for bootstrap operation

Fully operational to +600 V

Tolerant to negative transient voltage, dV/dt immune

Gate drive supply range from 10 V to 20 V

Under voltage lockout for both channels

33 V and 5 V input logic compatible

Matched propagation delay for both channels

Logic and power ground +/- 5 V offset

Lower di/dt gate driver for better noise immunity

Output source/sink current capability 14 A/18 A

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