Infineon High Side Gate Driver, 1.8 A 8-Pin 600 V, SOIC

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Subtotal (1 reel of 2500 units)*

₩3,708,300.00

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  • 2026년 5월 25일 부터 배송
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릴당*
2500 - 2500₩1,483.32₩3,708,300.00
5000 - 5000₩1,453.24₩3,634,510.00
7500 +₩1,425.04₩3,561,660.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
258-4009
제조사 부품 번호:
IRS2181STRPBF
제조업체:
Infineon
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브랜드

Infineon

Product Type

Gate Driver Module

Output Current

1.8A

Pin Count

8

Package Type

SOIC

Fall Time

20ns

Driver Type

High Side

Rise Time

60ns

Minimum Supply Voltage

10V

Maximum Supply Voltage

600V

Minimum Operating Temperature

-50°C

Maximum Operating Temperature

150°C

Series

IRS

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon high and low side driver are high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.

Floating channel designed for bootstrap operation

Fully operational to +600 V

Tolerant to negative transient voltage, dV/dt immune

Gate drive supply range from 10 V to 20 V

Under voltage lockout for both channels

Matched propagation delay for both channels

Logic and power ground +/- 5 V offset

Lower di/dt gate driver for better noise immunity

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