Infineon IRS2113SPBF High Side Gate Driver, 2.5 A 16-Pin 20 V, SOIC
- RS 제품 번호:
- 257-5824
- 제조사 부품 번호:
- IRS2113SPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 pack of 2 units)*
₩10,001.60
일시적 품절
- 2026년 12월 14일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 2 - 8 | ₩5,000.80 | ₩10,001.60 |
| 10 - 24 | ₩4,502.60 | ₩9,005.20 |
| 26 - 98 | ₩4,248.80 | ₩8,497.60 |
| 100 - 498 | ₩3,713.00 | ₩7,426.00 |
| 500 + | ₩3,619.00 | ₩7,238.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 257-5824
- 제조사 부품 번호:
- IRS2113SPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 2.5A | |
| Pin Count | 16 | |
| Fall Time | 17ns | |
| Package Type | SOIC | |
| Driver Type | High Side | |
| Rise Time | 35ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Series | IRS2110/IRS2113 | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Gate Driver | ||
Output Current 2.5A | ||
Pin Count 16 | ||
Fall Time 17ns | ||
Package Type SOIC | ||
Driver Type High Side | ||
Rise Time 35ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Series IRS2110/IRS2113 | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon high and low side driver are high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 V or 600 V.
Floating channel designed for bootstrap operation
Fully operational to +500 V or +600 V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10 V to 20 V
Under voltage lockout for both channels
33 V logic compatible
Logic and power ground ± 5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
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