Infineon, Gate Driver, 600 mA 8-Pin 625 V, SOIC
- RS 제품 번호:
- 257-5578
- 제조사 부품 번호:
- IRS2103SPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 tube of 95 units)*
₩156,810.80
재고있음
- 추가로 2025년 12월 29일 부터 3,705 개 단위 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 95 - 95 | ₩1,650.64 | ₩156,720.56 |
| 190 - 190 | ₩1,616.80 | ₩153,577.20 |
| 285 - 475 | ₩1,584.84 | ₩150,505.28 |
| 570 - 950 | ₩1,537.84 | ₩146,004.56 |
| 1045 + | ₩1,490.84 | ₩141,612.88 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 257-5578
- 제조사 부품 번호:
- IRS2103SPBF
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 600mA | |
| Pin Count | 8 | |
| Fall Time | 35ns | |
| Package Type | SOIC | |
| Driver Type | Gate Driver | |
| Rise Time | 70ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 625V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | IRS2103 | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Gate Driver | ||
Output Current 600mA | ||
Pin Count 8 | ||
Fall Time 35ns | ||
Package Type SOIC | ||
Driver Type Gate Driver | ||
Rise Time 70ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 625V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series IRS2103 | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon half bridge driver is a high voltage, high speed power MOSFET and IGBT drivers with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Floating gate driver designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 10 V to 20 V
Under voltage lockout
33 V, 5 V, and 15 V logic input compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
Internal set dead time
High-side output in phase with HIN input
Low-side output out of phase with LIN input
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