Infineon, Gate Driver, 600 mA 8-Pin 600 V, SOIC
- RS 제품 번호:
- 257-5588
- 제조사 부품 번호:
- IRS21091SPBF
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 tube of 95 units)*
₩167,348.20
일시적 품절
- 2026년 12월 14일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 95 - 95 | ₩1,761.56 | ₩167,293.68 |
| 190 - 190 | ₩1,504.00 | ₩142,827.36 |
| 285 - 475 | ₩1,473.92 | ₩139,969.76 |
| 570 - 950 | ₩1,428.80 | ₩135,771.72 |
| 1045 + | ₩1,385.56 | ₩131,699.64 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 257-5588
- 제조사 부품 번호:
- IRS21091SPBF
- 제조업체:
- Infineon
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 600mA | |
| Pin Count | 8 | |
| Fall Time | 35ns | |
| Package Type | SOIC | |
| Driver Type | Gate Driver | |
| Rise Time | 220ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 600V | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 150°C | |
| Series | IRS | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Gate Driver | ||
Output Current 600mA | ||
Pin Count 8 | ||
Fall Time 35ns | ||
Package Type SOIC | ||
Driver Type Gate Driver | ||
Rise Time 220ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 600V | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 150°C | ||
Series IRS | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon half bridge driver are high voltage, high speed power MOSFET and IGBT driver with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Floating channel designed for bootstrap operation
Fully operational to +600 V
Tolerant to negative transient voltage, dV/dt immune
Under voltage lockout for both channels
Cross-conduction prevention logic
Matched propagation delay for both channels
High-side output in phase with IN input
Lower di/dt gate driver for better noise immunity
The dual function DT/SD input turns off both channels
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