Infineon, Gate Driver 625 V, SOIC-14N

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Subtotal (1 reel of 2500 units)*

₩4,450,900.00

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  • 2,500 개 단위 배송 준비 완료
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릴당*
2500 - 2500₩1,780.36₩4,449,960.00
5000 - 5000₩1,744.64₩4,360,660.00
7500 +₩1,708.92₩4,273,710.00

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
258-4011
제조사 부품 번호:
IRS21834STRPBF
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Product Type

Gate Driver Module

Fall Time

35ns

Package Type

SOIC-14N

Driver Type

Gate Driver

Rise Time

40ns

Minimum Supply Voltage

3.3V

Maximum Supply Voltage

625V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Automotive Standard

No

The Infineon half bridge driver are high voltage, high speed power MOSFET and IGBT drivers with dependent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.

Gate drive supply range from 10 V to 20 V

Under voltage lockout for both channels

3.3 V and 5 V input logic compatible

Matched propagation delay for both channels

Logic and power ground +/- 5 V offset

Lower di/dt gate driver for better noise immunity

Output source/sink current capability 1.4 A/1.8 A

RoHS compliant

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