Infineon 4 kB Serial-SPI FRAM 8-Pin SOIC, FM25L04B-G
- RS 제품 번호:
- 273-7386
- 제조사 부품 번호:
- FM25L04B-G
- 제조업체:
- Infineon
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- RS 제품 번호:
- 273-7386
- 제조사 부품 번호:
- FM25L04B-G
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Memory Size | 4kB | |
| Product Type | FRAM | |
| Organisation | 512 x 8 bit | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 20MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Standards/Approvals | Restriction of hazardous substances (RoHS) | |
| Maximum Operating Temperature | 85°C | |
| Minimum Supply Voltage | 2.7V | |
| Number of Words | 512 | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | 40°C | |
| Number of Bits per Word | 8 | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Memory Size 4kB | ||
Product Type FRAM | ||
Organisation 512 x 8 bit | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 20MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Standards/Approvals Restriction of hazardous substances (RoHS) | ||
Maximum Operating Temperature 85°C | ||
Minimum Supply Voltage 2.7V | ||
Number of Words 512 | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature 40°C | ||
Number of Bits per Word 8 | ||
Automotive Standard No | ||
The Infineon FRAM is a 4 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Very fast serial peripheral Interface
Sophisticated write protection scheme
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
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