Infineon 4 kB Serial-SPI FRAM 8-Pin, FM25L04B-G
- RS 제품 번호:
- 273-7386
- 제조사 부품 번호:
- FM25L04B-G
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 tube of 97 units)*
₩173,789.08
일시적 품절
- 2026년 3월 23일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 97 - 97 | ₩1,791.64 | ₩173,770.28 |
| 194 + | ₩1,737.12 | ₩168,555.16 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-7386
- 제조사 부품 번호:
- FM25L04B-G
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | FRAM | |
| Memory Size | 4kB | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 20MHz | |
| Pin Count | 8 | |
| Standards/Approvals | Restriction of hazardous substances (RoHS) | |
| Maximum Operating Temperature | 85°C | |
| Minimum Operating Temperature | 40°C | |
| Number of Words | 512 | |
| Automotive Standard | No | |
| Maximum Supply Voltage | 3.6V | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 2.7V | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type FRAM | ||
Memory Size 4kB | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 20MHz | ||
Pin Count 8 | ||
Standards/Approvals Restriction of hazardous substances (RoHS) | ||
Maximum Operating Temperature 85°C | ||
Minimum Operating Temperature 40°C | ||
Number of Words 512 | ||
Automotive Standard No | ||
Maximum Supply Voltage 3.6V | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 2.7V | ||
The Infineon FRAM is a 4 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Very fast serial peripheral Interface
Sophisticated write protection scheme
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
관련된 링크들
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