제조사부품번호

Infineon 4 kB Serial-SPI FRAM 8-Pin SOIC, FM25L04B-G

RS 제품 번호:: 273-7386
제조사 부품 번호:: FM25L04B-G
제조업체:: Infineon

Infineon 4 kB Serial-SPI FRAM 8-Pin SOIC, FM25L04B-G

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대량 구매 할인 기용 가능

Subtotal (1 tube of 97 units)*

₩191,660.36

일시적 품절

2026년 8월 17일 부터 배송

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당	Per Tube*
97 - 97	₩1,975.88	₩191,641.56
194 +	₩1,915.72	₩185,898.16

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 273-7386
제조사 부품 번호:: FM25L04B-G
제조업체:: Infineon

참조 문서

제정법과 컴플라이언스

제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	FRAM
	Memory Size	4kB
	Organisation	512 x 8 bit
	Interface Type	Serial-SPI
	Data Bus Width	8bit
	Maximum Clock Frequency	20MHz
	Package Type	SOIC
	Pin Count	8
	Standards/Approvals	Restriction of hazardous substances (RoHS)
	Maximum Operating Temperature	85°C
	Minimum Supply Voltage	2.7V
	Number of Words	512
	Automotive Standard	No
	Minimum Operating Temperature	40°C
	Number of Bits per Word	8
	Maximum Supply Voltage	3.6V

	모두 선택
	브랜드 Infineon
	Product Type FRAM
	Memory Size 4kB
	Organisation 512 x 8 bit
	Interface Type Serial-SPI
	Data Bus Width 8bit
	Maximum Clock Frequency 20MHz
	Package Type SOIC
	Pin Count 8
	Standards/Approvals Restriction of hazardous substances (RoHS)
	Maximum Operating Temperature 85°C
	Minimum Supply Voltage 2.7V
	Number of Words 512
	Automotive Standard No
	Minimum Operating Temperature 40°C
	Number of Bits per Word 8
	Maximum Supply Voltage 3.6V

Datasheet - FM25L04B-G

The Infineon FRAM is a 4 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.

RoHS compliant

Low power consumption

Very fast serial peripheral Interface

Sophisticated write protection scheme

High endurance 100 trillion read and write

Advanced high reliability ferroelectric process

Infineon 4 kB Serial-SPI FRAM 8-Pin SOIC, FM25L04B-G

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