제조사부품번호

Infineon 512 kB SPI FRAM 8-Pin SOIC, FM25V05-G

RS 제품 번호:: 125-4227
제조사 부품 번호:: FM25V05-G
제조업체:: Infineon

Infineon 512 kB SPI FRAM 8-Pin SOIC, FM25V05-G

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대량 구매 할인 기용 가능

Subtotal (1 unit)*

₩15,641.60

재고있음

3 개 단위 배송 준비 완료
추가로 2026년 2월 12일 부터 73 개 단위 배송

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수량	한팩당
1 - 24	₩15,641.60
25 - 48	₩15,284.40
49 +	₩14,964.80

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 125-4227
제조사 부품 번호:: FM25V05-G
제조업체:: Infineon

참조 문서

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제품 세부 사항

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모두 선택	제품 정보	값
	브랜드	Infineon
	Memory Size	512kB
	Product Type	FRAM
	Organisation	64k x 8 Bit
	Interface Type	SPI
	Data Bus Width	8bit
	Maximum Random Access Time	18ns
	Mount Type	Surface
	Maximum Clock Frequency	40MHz
	Package Type	SOIC
	Pin Count	8
	Width	3.98 mm
	Height	1.38mm
	Standards/Approvals	No
	Length	4.97mm
	Maximum Operating Temperature	85°C
	Minimum Operating Temperature	-40°C
	Automotive Standard	AEC-Q100
	Maximum Supply Voltage	3.6V
	Number of Words	64K
	Number of Bits per Word	8
	Minimum Supply Voltage	2V

	모두 선택
	브랜드 Infineon
	Memory Size 512kB
	Product Type FRAM
	Organisation 64k x 8 Bit
	Interface Type SPI
	Data Bus Width 8bit
	Maximum Random Access Time 18ns
	Mount Type Surface
	Maximum Clock Frequency 40MHz
	Package Type SOIC
	Pin Count 8
	Width 3.98 mm
	Height 1.38mm
	Standards/Approvals No
	Length 4.97mm
	Maximum Operating Temperature 85°C
	Minimum Operating Temperature -40°C
	Automotive Standard AEC-Q100
	Maximum Supply Voltage 3.6V
	Number of Words 64K
	Number of Bits per Word 8
	Minimum Supply Voltage 2V

FM25V05-G Datasheet

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Infineon 512 kB SPI FRAM 8-Pin SOIC, FM25V05-G

FRAM, Cypress Semiconductor

FRAM (Ferroelectric RAM)

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