Infineon 256kbit Parallel FRAM Memory 28-Pin SOIC, FM18W08-SG

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Subtotal (1 tube of 27 units)*

₩451,967.04

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Per Tube*
27 - 27₩16,739.52₩451,987.72
54 - 81₩16,404.88₩442,946.80
108 +₩16,077.76₩434,093.88

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:
188-5394
제조사 부품 번호:
FM18W08-SG
제조업체:
Infineon
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모두 선택

브랜드

Infineon

Memory Size

256kbit

Organisation

32K x 8 bit

Interface Type

Parallel

Data Bus Width

8bit

Maximum Random Access Time

70ns

Mounting Type

Surface Mount

Package Type

SOIC

Pin Count

28

Dimensions

18.11 x 7.62 x 2.37mm

Length

18.11mm

Maximum Operating Supply Voltage

5.5 V

Width

7.62mm

Height

2.37mm

Maximum Operating Temperature

+85 °C

Number of Words

32k

Automotive Standard

AEC-Q100

Minimum Operating Temperature

-40 °C

Number of Bits per Word

8bit

Minimum Operating Supply Voltage

2.7 V

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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