Infineon 64 kB Parallel FRAM 28-Pin SOIC-28, FM16W08-SG
- RS 제품 번호:
- 273-7374
- 제조사 부품 번호:
- FM16W08-SG
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
Subtotal (1 tube of 27 units)*
₩232,480.80
현재 액세스할 수 없는 재고 정보 - 나중에 다시 확인해 주세요.
수량 | 한팩당 | Per Tube* |
|---|---|---|
| 27 - 81 | ₩8,610.40 | ₩232,501.48 |
| 108 + | ₩8,266.36 | ₩223,191.72 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-7374
- 제조사 부품 번호:
- FM16W08-SG
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Memory Size | 64kB | |
| Product Type | FRAM | |
| Organisation | 8k x 8 bit | |
| Interface Type | Parallel | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 70ns | |
| Package Type | SOIC-28 | |
| Pin Count | 28 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Minimum Supply Voltage | 2.7V | |
| Minimum Operating Temperature | -40°C | |
| Automotive Standard | No | |
| Maximum Supply Voltage | 5.5V | |
| Number of Words | 8K | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Memory Size 64kB | ||
Product Type FRAM | ||
Organisation 8k x 8 bit | ||
Interface Type Parallel | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 70ns | ||
Package Type SOIC-28 | ||
Pin Count 28 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Minimum Supply Voltage 2.7V | ||
Minimum Operating Temperature -40°C | ||
Automotive Standard No | ||
Maximum Supply Voltage 5.5V | ||
Number of Words 8K | ||
The Infineon FRAM is a 8 K x 8 non volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or FRAM is non volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery backed SRAM. Fast write timing and high write endurance make the FRAM superior to other types of memory. Its operation is similar to that of other RAM devices and therefore, it can be used as a drop in replacement for a standard SRAM in a system. Minimum read and write cycle times are equal. The FRAM memory is non volatile due to its unique ferroelectric memory process.
Low power consumption
SRAM and EEPROM compatible
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
Superior for moisture and shock with vibration
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