Infineon MIRRORBIT 1 GB SPI Flash Memory 56-Pin TSOP-56, S29GL01GS10TFI010
- RS 제품 번호:
- 273-7524
- 제조사 부품 번호:
- S29GL01GS10TFI010
- 제조업체:
- Infineon
본 이미지는 참조용이오니 재확인이 필요하시면 문의해주세요.
Subtotal (1 tray of 91 units)*
₩1,864,772.00
일시적 품절
- 2026년 5월 12일 부터 배송
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 | Per Tray* |
|---|---|---|
| 91 + | ₩20,492.00 | ₩1,864,839.68 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 273-7524
- 제조사 부품 번호:
- S29GL01GS10TFI010
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Flash Memory | |
| Memory Size | 1GB | |
| Interface Type | SPI | |
| Package Type | TSOP-56 | |
| Pin Count | 56 | |
| Maximum Clock Frequency | 5MHz | |
| Cell Type | MIRRORBIT | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 2.7V | |
| Timing Type | Asynchronous | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 105°C | |
| Standards/Approvals | No | |
| Series | S29GL-S | |
| Number of Words | 256 | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 90ns | |
| Supply Current | 100mA | |
| Automotive Standard | AEC-Q100 Grade 2 & 3 | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Flash Memory | ||
Memory Size 1GB | ||
Interface Type SPI | ||
Package Type TSOP-56 | ||
Pin Count 56 | ||
Maximum Clock Frequency 5MHz | ||
Cell Type MIRRORBIT | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 2.7V | ||
Timing Type Asynchronous | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 105°C | ||
Standards/Approvals No | ||
Series S29GL-S | ||
Number of Words 256 | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 90ns | ||
Supply Current 100mA | ||
Automotive Standard AEC-Q100 Grade 2 & 3 | ||
The Infineon Flash Memory offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. Provides an ideal storage solution for systems with limited space, signal connections and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM, executing code directly and storing re programmable data.
Double data rate option
Quad peripheral interface option
Minimum 20 year data retention
Serial peripheral interface with multi IO
Minimum 100000 program erase cycles
Clock polarity and phase modes 0 and 3
관련된 링크들
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