제조사부품번호

Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

RS 제품 번호:: 188-2794P
제조사 부품 번호:: W29N01HVBINF
제조업체:: Winbond

Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

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대량 구매 할인 기용 가능

Subtotal 55 units (supplied in a tray)*

₩323,435.20

일시적 품절

105 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
55 - 100	₩5,880.64
105 +	₩5,749.04

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 188-2794P
제조사 부품 번호:: W29N01HVBINF
제조업체:: Winbond

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Winbond
	Product Type	Flash Memory
	Memory Size	1GB
	Interface Type	Parallel
	Package Type	VFBGA
	Pin Count	63
	Organisation	128M x 8 Bit
	Mount Type	Surface
	Cell Type	SLC NAND
	Maximum Supply Voltage	3.6V
	Minimum Supply Voltage	2.7V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	85°C
	Standards/Approvals	No
	Height	0.6mm
	Length	11.1mm
	Width	11.1 mm
	Series	W29N01HV
	Automotive Standard	No
	Number of Words	128M
	Maximum Random Access Time	25μs
	Supply Current	35mA
	Number of Bits per Word	8

	모두 선택
	브랜드 Winbond
	Product Type Flash Memory
	Memory Size 1GB
	Interface Type Parallel
	Package Type VFBGA
	Pin Count 63
	Organisation 128M x 8 Bit
	Mount Type Surface
	Cell Type SLC NAND
	Maximum Supply Voltage 3.6V
	Minimum Supply Voltage 2.7V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 85°C
	Standards/Approvals No
	Height 0.6mm
	Length 11.1mm
	Width 11.1 mm
	Series W29N01HV
	Automotive Standard No
	Number of Words 128M
	Maximum Random Access Time 25μs
	Supply Current 35mA
	Number of Bits per Word 8

Datasheet W29N01HVBINF

COO (Country of Origin):: TW

Density : 1Gbit (Single chip solution)

Vcc : 2.7V to 3.6V

Bus width : x8

Operating temperature

Industrial: -40°C to 85°C

Single-Level Cell (SLC) technology.

Organization

Density: 1G-bit/128M-byte

Page size

2,112 bytes (2048 + 64 bytes)

Block size

64 pages (128K + 4K bytes)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command set

Additional command support

Copy Back

Lowest power consumption

Read: 25mA(typ.3V),

Program/Erase: 25mA(typ.3V),

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

48-ball VFBGA

63-ball VFBGA

1Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Winbond SLC NAND 1 GB Parallel Flash Memory 63-Pin VFBGA

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