ROHM BR25H160FJ-2CE2, 16kbit EEPROM Memory 8-Pin SOP-J SPI
- RS 제품 번호:
- 185-0684
- 제조사 부품 번호:
- BR25H160FJ-2CE2
- 제조업체:
- ROHM
현재 비가용
RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 185-0684
- 제조사 부품 번호:
- BR25H160FJ-2CE2
- 제조업체:
- ROHM
사양
참조 문서
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제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | ROHM | |
| Memory Size | 16kbit | |
| Interface Type | SPI | |
| Package Type | SOP-J | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Organisation | 2K x 8 bit | |
| Minimum Operating Supply Voltage | 2.5 V | |
| Maximum Operating Supply Voltage | 5.5 V | |
| Programming Voltage | 2.5 → 5.5V | |
| Number of Bits per Word | 8bit | |
| Dimensions | 4.9 x 3.9 x 1.37mm | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 2K | |
| Maximum Operating Temperature | +125 °C | |
| Automotive Standard | AEC-Q100 | |
| Data Retention | 100yr | |
| 모두 선택 | ||
|---|---|---|
브랜드 ROHM | ||
Memory Size 16kbit | ||
Interface Type SPI | ||
Package Type SOP-J | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Organisation 2K x 8 bit | ||
Minimum Operating Supply Voltage 2.5 V | ||
Maximum Operating Supply Voltage 5.5 V | ||
Programming Voltage 2.5 → 5.5V | ||
Number of Bits per Word 8bit | ||
Dimensions 4.9 x 3.9 x 1.37mm | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 2K | ||
Maximum Operating Temperature +125 °C | ||
Automotive Standard AEC-Q100 | ||
Data Retention 100yr | ||
- COO (Country of Origin):
- JP
BR25H160-2C is a serial EEPROM of SPI BUS interface method.
High Speed Clock Action up to 20MHz (Max)
Wait Function by HOLDB Terminal
Part or Whole of Memory Arrays Settable as Read only Memory Area by Program
1.6V to 5.5V Single Power Source Operation Most Suitable for Battery Use.
Up to 64 Bytes in Page Write Mode.
For SPI Bus Interface (CPOL, CPHA) = (0, 0), (1, 1)
Self-timed Programming Cycle
Low Current Consumption
At Write Action (5V) : 0.5mA (Typ)
At Read Action (5V) : 2.0mA (Typ)
At Standby Action (5V) : 0.1μA (Typ)
Address Auto Increment Function at Read Action
Prevention of Write Mistake
Write Prohibition at Power On
Write Prohibition by Command Code (WRDI)
Write Prohibition by WPB Pin
Write Prohibition Block Setting by Status Registers (BP1, BP0)
Prevention of Write Mistake at Low Voltage
More than 100 years Data Retention.
More than 1 Million Write Cycles.
Bit Format 16Kx8
Initial Delivery Data
Memory Array: FFh
Status Register: WPEN, BP1, BP0 : 0
Wait Function by HOLDB Terminal
Part or Whole of Memory Arrays Settable as Read only Memory Area by Program
1.6V to 5.5V Single Power Source Operation Most Suitable for Battery Use.
Up to 64 Bytes in Page Write Mode.
For SPI Bus Interface (CPOL, CPHA) = (0, 0), (1, 1)
Self-timed Programming Cycle
Low Current Consumption
At Write Action (5V) : 0.5mA (Typ)
At Read Action (5V) : 2.0mA (Typ)
At Standby Action (5V) : 0.1μA (Typ)
Address Auto Increment Function at Read Action
Prevention of Write Mistake
Write Prohibition at Power On
Write Prohibition by Command Code (WRDI)
Write Prohibition by WPB Pin
Write Prohibition Block Setting by Status Registers (BP1, BP0)
Prevention of Write Mistake at Low Voltage
More than 100 years Data Retention.
More than 1 Million Write Cycles.
Bit Format 16Kx8
Initial Delivery Data
Memory Array: FFh
Status Register: WPEN, BP1, BP0 : 0
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