Infineon BFP720H6327XTSA1 Transistor, 25 mA NPN, 13 V, 4-Pin SOT-343
- RS 제품 번호:
- 897-7282
- 제조사 부품 번호:
- BFP720H6327XTSA1
- 제조업체:
- Infineon
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대량 구매 할인 기용 가능
View bulk pricing optionsSubtotal (1 pack of 15 units)*
₩6,450.00
마지막 RS 재고
- 최종적인 930 개 unit(s)이 배송 준비 됨
수량 | 한팩당 | 한팩당* |
|---|---|---|
| 15 - 735 | ₩430.00 | ₩6,460.00 |
| 750 - 1485 | ₩420.00 | ₩6,300.00 |
| 1500 + | ₩414.00 | ₩6,220.00 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 897-7282
- 제조사 부품 번호:
- BFP720H6327XTSA1
- 제조업체:
- Infineon
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 25mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Minimum DC Current Gain hFE | 160 | |
| Maximum Power Dissipation Pd | 100mW | |
| Maximum Transition Frequency ft | 45GHz | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 2.1mm | |
| Series | BFP720 | |
| Height | 0.9mm | |
| Length | 2mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 25mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 13V | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Minimum DC Current Gain hFE 160 | ||
Maximum Power Dissipation Pd 100mW | ||
Maximum Transition Frequency ft 45GHz | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 2.1mm | ||
Series BFP720 | ||
Height 0.9mm | ||
Length 2mm | ||
Automotive Standard No | ||
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
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