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Infineon BFP540FESDH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 10 V, 4-Pin SOT-343

RS 제품 번호:: 259-1434
제조사 부품 번호:: BFP540FESDH6327XTSA1
제조업체:: Infineon

Infineon BFP540FESDH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 10 V, 4-Pin SOT-343

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RS 제품 번호:: 259-1434
제조사 부품 번호:: BFP540FESDH6327XTSA1
제조업체:: Infineon

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모두 선택	제품 정보	값
	브랜드	Infineon
	Product Type	RF Bipolar Transistor
	Maximum DC Collector Current Idc	80mA
	Maximum Collector Emitter Voltage Vceo	10V
	Package Type	SOT-343
	Mount Type	Surface
	Maximum Collector Base Voltage VCBO	10V
	Maximum Power Dissipation Pd	250mW
	Minimum Operating Temperature	-55°C
	Transistor Polarity	NPN
	Minimum DC Current Gain hFE	50
	Maximum Emitter Base Voltage VEBO	1V
	Maximum Transition Frequency ft	30GHz
	Pin Count	4
	Maximum Operating Temperature	150°C
	Length	1.4mm
	Width	2.1 mm
	Standards/Approvals	RoHS
	Series	BFP540
	Height	0.55mm
	Automotive Standard	No

	모두 선택
	브랜드 Infineon
	Product Type RF Bipolar Transistor
	Maximum DC Collector Current Idc 80mA
	Maximum Collector Emitter Voltage Vceo 10V
	Package Type SOT-343
	Mount Type Surface
	Maximum Collector Base Voltage VCBO 10V
	Maximum Power Dissipation Pd 250mW
	Minimum Operating Temperature -55°C
	Transistor Polarity NPN
	Minimum DC Current Gain hFE 50
	Maximum Emitter Base Voltage VEBO 1V
	Maximum Transition Frequency ft 30GHz
	Pin Count 4
	Maximum Operating Temperature 150°C
	Length 1.4mm
	Width 2.1 mm
	Standards/Approvals RoHS
	Series BFP540
	Height 0.55mm
	Automotive Standard No

Datasheet - BFP540FESDH6327XTSA1

The Infineon NPN silicon RF transistor for ESD protected high gain low noise amplifier. It has excellent ESD performance typical Value of 1000 V (HBM).

SIEGET 45 - Line

Pb-free (RoHS compliant) package

Infineon BFP540FESDH6327XTSA1 RF Bipolar Transistor, 80 mA NPN, 10 V, 4-Pin SOT-343

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