Power Integrations SiC Schottky, Single, 12 A, 2-Pin 600 V TO-220

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포장 옵션
RS 제품 번호:
231-8074P
제조사 부품 번호:
QH12TZ600Q
제조업체:
Power Integrations
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브랜드

Power Integrations

Diode Configuration

Single

Product Type

SiC Schottky

Maximum Forward Current If

12A

Sub Type

SiC Schottky

Mount Type

Through Hole

Package Type

TO-220

Pin Count

2

Peak Reverse Recovery Time trr

20.5ns

Maximum Power Dissipation Pd

61mW

Maximum Forward Voltage Vf

3.1V

Peak Non-Repetitive Forward Surge Current Ifsm

100A

Minimum Operating Temperature

-55°C

Maximum Peak Reverse Repetitive Voltage Vrrm

600V

Maximum Operating Temperature

150°C

Width

4.7mm

Standards/Approvals

No

Length

10.67mm

Height

30.73mm

Automotive Standard

No

The Power Integrations Qspeed H-Series SiC Replacement Diode has the lowest QRR of any 600 V silicon diode. Its recovery characteristics increase efficiency, reduces EMI and eliminates snubbers. It replaces SiC diodes for similar efficiency performance in high switching frequency applications.

Features and Benefits


Low QRR, low IRRM, low tRR

High dIF/dt capable (1000 A / μs)

Soft recovery

AEC-Q101 qualified

Fab, assembly and test certified to IATF 16949

Eliminates need for snubber circuits

Reduces EMI filter component size & count

Enables extremely fast switching

Applications


Power Factor Correction boost diode in on-board charger

Output rectifier of on-board charger

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