onsemi Switching Diode, Single, 23.4 A, 3-Pin 650 V TO-252
- RS 제품 번호:
- 202-7286P
- 제조사 부품 번호:
- FFSD2065B
- 제조업체:
- onsemi
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RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 202-7286P
- 제조사 부품 번호:
- FFSD2065B
- 제조업체:
- onsemi
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참조 문서
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Maximum Forward Current If | 23.4A | |
| Product Type | Switching Diode | |
| Diode Configuration | Single | |
| Mount Type | Surface | |
| Sub Type | Silicon Carbide (SiC) Schottky Diode | |
| Package Type | TO-252 | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 763A | |
| Maximum Power Dissipation Pd | 160mW | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.4V | |
| Maximum Operating Temperature | 175°C | |
| Height | 10.41mm | |
| Width | 2.39mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Maximum Forward Current If 23.4A | ||
Product Type Switching Diode | ||
Diode Configuration Single | ||
Mount Type Surface | ||
Sub Type Silicon Carbide (SiC) Schottky Diode | ||
Package Type TO-252 | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 763A | ||
Maximum Power Dissipation Pd 160mW | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 650V | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.4V | ||
Maximum Operating Temperature 175°C | ||
Height 10.41mm | ||
Width 2.39mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, DPAK
The ON Semiconductor silicon carbide (Sic) Schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High surge current capacity
Positive temperature coefficient
Ease of paralleling
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