onsemi Switching Diode, Single, 23.4 A, 3-Pin 650 V TO-252 FFSD2065B
- RS 제품 번호:
- 202-7286
- 제조사 부품 번호:
- FFSD2065B
- 제조업체:
- onsemi
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RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 202-7286
- 제조사 부품 번호:
- FFSD2065B
- 제조업체:
- onsemi
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제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Product Type | Switching Diode | |
| Maximum Forward Current If | 23.4A | |
| Diode Configuration | Single | |
| Sub Type | Silicon Carbide (SiC) Schottky Diode | |
| Mount Type | Surface | |
| Package Type | TO-252 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 763A | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Maximum Power Dissipation Pd | 160mW | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 10.41mm | |
| Width | 2.39mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Product Type Switching Diode | ||
Maximum Forward Current If 23.4A | ||
Diode Configuration Single | ||
Sub Type Silicon Carbide (SiC) Schottky Diode | ||
Mount Type Surface | ||
Package Type TO-252 | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 763A | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 650V | ||
Maximum Power Dissipation Pd 160mW | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 10.41mm | ||
Width 2.39mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, DPAK
The ON Semiconductor silicon carbide (Sic) Schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High surge current capacity
Positive temperature coefficient
Ease of paralleling
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