onsemi Switching Diode, Single, 23.4 A, 3-Pin 650 V TO-252
- RS 제품 번호:
- 202-7285
- 제조사 부품 번호:
- FFSD2065B
- 제조업체:
- onsemi
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RS는 이 제품을 더 이상 판매하지 않습니다.
- RS 제품 번호:
- 202-7285
- 제조사 부품 번호:
- FFSD2065B
- 제조업체:
- onsemi
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모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | onsemi | |
| Diode Configuration | Single | |
| Product Type | Switching Diode | |
| Maximum Forward Current If | 23.4A | |
| Mount Type | Surface | |
| Sub Type | Silicon Carbide (SiC) Schottky Diode | |
| Package Type | TO-252 | |
| Pin Count | 3 | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Maximum Power Dissipation Pd | 160mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Forward Voltage Vf | 2.4V | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 763A | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 10.41mm | |
| Width | 2.39mm | |
| Automotive Standard | No | |
| 모두 선택 | ||
|---|---|---|
브랜드 onsemi | ||
Diode Configuration Single | ||
Product Type Switching Diode | ||
Maximum Forward Current If 23.4A | ||
Mount Type Surface | ||
Sub Type Silicon Carbide (SiC) Schottky Diode | ||
Package Type TO-252 | ||
Pin Count 3 | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 650V | ||
Maximum Power Dissipation Pd 160mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Forward Voltage Vf 2.4V | ||
Peak Non-Repetitive Forward Surge Current Ifsm 763A | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 10.41mm | ||
Width 2.39mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, DPAK
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 650 V, D2, DPAK
The ON Semiconductor silicon carbide (Sic) Schottky diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
High surge current capacity
Positive temperature coefficient
Ease of paralleling
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