Infineon SRAM Memory Chip, CY14B101PA-SFXI- 1Mbit
- RS 제품 번호:
- 181-8377
- 제조사 부품 번호:
- CY14B101PA-SFXI
- 제조업체:
- Infineon
대량 구매 할인 기용 가능
Subtotal (1 unit)*
₩20,191.20
재고있음
- 603 개 단위 배송 준비 완료
더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.
수량 | 한팩당 |
|---|---|
| 1 - 11 | ₩20,191.20 |
| 12 - 22 | ₩19,758.80 |
| 23 + | ₩19,345.20 |
* 참고 가격: 실제 구매가격과 다를 수 있습니다
- RS 제품 번호:
- 181-8377
- 제조사 부품 번호:
- CY14B101PA-SFXI
- 제조업체:
- Infineon
사양
참조 문서
제정법과 컴플라이언스
제품 세부 사항
제품 정보를 선택해 유사 제품을 찾기
모두 선택 | 제품 정보 | 값 |
|---|---|---|
| 브랜드 | Infineon | |
| Memory Size | 1Mbit | |
| Organisation | 128k x 8 bit | |
| Number of Words | 128k | |
| Number of Bits per Word | 8bit | |
| Maximum Random Access Time | 15ns | |
| Clock Frequency | 104MHz | |
| Low Power | Yes | |
| Timing Type | Synchronous | |
| Mounting Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 16 | |
| Dimensions | 10.49 x 7.59 x 2.36mm | |
| Height | 2.36mm | |
| Maximum Operating Supply Voltage | 2.6 V | |
| Length | 10.49mm | |
| Maximum Operating Temperature | +85 °C | |
| Width | 7.59mm | |
| Minimum Operating Temperature | -40 °C | |
| Minimum Operating Supply Voltage | 2.4 V | |
| 모두 선택 | ||
|---|---|---|
브랜드 Infineon | ||
Memory Size 1Mbit | ||
Organisation 128k x 8 bit | ||
Number of Words 128k | ||
Number of Bits per Word 8bit | ||
Maximum Random Access Time 15ns | ||
Clock Frequency 104MHz | ||
Low Power Yes | ||
Timing Type Synchronous | ||
Mounting Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 16 | ||
Dimensions 10.49 x 7.59 x 2.36mm | ||
Height 2.36mm | ||
Maximum Operating Supply Voltage 2.6 V | ||
Length 10.49mm | ||
Maximum Operating Temperature +85 °C | ||
Width 7.59mm | ||
Minimum Operating Temperature -40 °C | ||
Minimum Operating Supply Voltage 2.4 V | ||
The Cypress CY14X101PA combines a 1-Mbit nv SRAM[1] with a full-featured RTC in a monolithic integrated circuit with serial SPI interface. The memory is organized as 128K words of 8 bits each. The embedded nonvolatile elements incorporate the Quantum Trap technology, creating the worlds most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while the Quantum Trap cells provide highly reliable nonvolatile storage of data. Data transfers from SRAM to the nonvolatile elements (STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM from the nonvolatile memory (RECALL operation).You can also initiate the STORE and RECALL operations through SPI instruction.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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