제조사부품번호

Alliance Memory AS4C32M16SB-7TCN, SDRAM 512Mbit Surface Mount, 200MHz, 3 V to 3.6 V, 54-Pin TSOP

RS 제품 번호:: 230-8426P
제조사 부품 번호:: AS4C32M16SB-7TCN
제조업체:: Alliance Memory

Alliance Memory AS4C32M16SB-7TCN, SDRAM 512Mbit Surface Mount, 200MHz, 3 V to 3.6 V, 54-Pin TSOP

대량 구매 할인 기용 가능

Subtotal 10 units (supplied in a tray)*

₩182,736.00

재고있음

124 개 단위 배송 준비 완료

더 자세한 내용이 필요하신가요? 필요한 수량을 입력하고 '배송일 확인'을 클릭하면 더 많은 재고 및 배송 세부정보를 확인하실 수 있습니다.

수량	한팩당
10 - 24	₩18,273.60
25 - 49	₩18,048.00
50 - 74	₩17,822.40
75 +	₩17,465.20

* 참고 가격: 실제 구매가격과 다를 수 있습니다

RS 제품 번호:: 230-8426P
제조사 부품 번호:: AS4C32M16SB-7TCN
제조업체:: Alliance Memory

참조 문서

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제품 세부 사항

제품 정보를 선택해 유사 제품을 찾기

모두 선택	제품 정보	값
	브랜드	Alliance Memory
	Memory Size	512Mbit
	SDRAM Class	DDR
	Organisation	32M x 16
	Data Rate	200MHz
	Data Bus Width	16bit
	Address Bus Width	13bit
	Number of Bits per Word	16bit
	Maximum Random Access Time	5.4ns
	Number of Words	32 M
	Mounting Type	Surface Mount
	Package Type	TSOP
	Pin Count	54
	Dimensions	22.35 x 10.29 x 1.2mm
	Height	1.2mm
	Length	22.35mm
	Maximum Operating Supply Voltage	3.6 V
	Maximum Operating Temperature	+70 °C
	Minimum Operating Temperature	0 °C
	Minimum Operating Supply Voltage	3 V
	Width	10.29mm

	모두 선택
	브랜드 Alliance Memory
	Memory Size 512Mbit
	SDRAM Class DDR
	Organisation 32M x 16
	Data Rate 200MHz
	Data Bus Width 16bit
	Address Bus Width 13bit
	Number of Bits per Word 16bit
	Maximum Random Access Time 5.4ns
	Number of Words 32 M
	Mounting Type Surface Mount
	Package Type TSOP
	Pin Count 54
	Dimensions 22.35 x 10.29 x 1.2mm
	Height 1.2mm
	Length 22.35mm
	Maximum Operating Supply Voltage 3.6 V
	Maximum Operating Temperature +70 °C
	Minimum Operating Temperature 0 °C
	Minimum Operating Supply Voltage 3 V
	Width 10.29mm

Datasheet - AS4C32M16SB-7TCN

The Alliance Memory 512Mb SDRAM is a high-speed CMOS synchronous DRAM containing 512 Mbits. It is internally configured as 4 Banks of 8M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented

accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a Bank Activate command which is then followed by a Read or Write command.

Auto Refresh and Self Refresh
8192 refresh cycles/64ms
CKE power down mode
Single +3.3V ±0.3V power supply

Alliance Memory AS4C32M16SB-7TCN, SDRAM 512Mbit Surface Mount, 200MHz, 3 V to 3.6 V, 54-Pin TSOP

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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